[1] Yao J P, Capmany J. Microwave photonics[J]. Science China Information Sciences, 65, 221401(2022).

[2] Chen M L, Yin Y P. Discussion on microwave photon link transmission over long distance without relay[J]. Digital Technology & Application, 176-177(2014).

[3] Cui D J, Zhou L, Xi S Q et al. Research on high sensitivity balanced photodetector for space application[J]. Semiconductor Optoelectronics, 41, 480-484(2020).

[4] Shi Q Y, Ai Y, Liang H X et al. Analysis and test of balanced detector in coherent optical communication[J]. Science Technology and Engineering, 16, 207-211(2016).

[5] Liu H Y, Zhang Y G, Ai Y et al. Design and implementation of balance detector used in coherent optical communication system[J]. Laser & Optoelectronics Progress, 51, 070601(2014).

[6] Beling A. Periodic travelling wave photodetectors with serial and parallel optical feed based on InP[D](2006).

[7] Beling A, Chen H, Pan H P et al. High-power monolithically integrated traveling wave photodiode array[J]. IEEE Photonics Technology Letters, 21, 1813-1815(2009).

[8] Shimizu N, Watanabe N, Furuta T et al. InP-InGaAs uni-traveling-carrier photodiode with improved 3-dB bandwidth of over 150 GHz[J]. IEEE Photonics Technology Letters, 10, 412-414(1998).

[9] Shi J W, Wu Y S, Wu C Y et al. High-speed, high-responsivity, and high-power performance of near-ballistic uni-traveling-carrier photodiode at 1.55-μm wavelength[J]. IEEE Photonics Technology Letters, 17, 1929-1931(2005).

[10] Tian Y X, Xiong B, Sun C Z et al. Ultrafast MUTC photodiodes with 230 GHz bandwidth[C](2023).

[11] Zhou G, Runge P, Keyvaninia S et al. High-power InP-based waveguide integrated modified uni-traveling-carrier photodiodes[J]. Journal of Lightwave Technology, 35, 717-721(2017).

[12] Runge P, Zhou G, Keyvaninia S et al. Waveguide integrated balanced MUTC photodiode[C](2016).

[13] Hulme J, Kennedy M J, Chao R L et al. Fully integrated microwave frequency synthesizer on heterogeneous silicon-III/V[J]. Optics Express, 25, 2422-2431(2017).

[14] Xie X J, Zhou Q G, Norberg E et al. High-power and high-speed heterogeneously integrated waveguide-coupled photodiodes on silicon-on-insulator[J]. Journal of Lightwave Technology, 34, 73-78(2016).

[15] Houtsma V, Hu T C, Weimann N G et al. A 1 W linear high-power InP balanced uni-traveling carrier photodetector[C], Tu.3.LeSaleve.6(2011).

[16] Li Z, Chen H, Pan H P et al. High-power integrated balanced photodetector[J]. IEEE Photonics Technology Letters, 21, 1858-1860(2009).

[17] Zhou Q G, Cross A S, Fu Y et al. Balanced InP/InGaAs photodiodes with 1.5-W output power[J]. IEEE Photonics Journal, 5, 6800307(2013).

[18] Ke Y X, Cen Y Q, Qi D Y et al. Two dimensional materials photodetectors for optical communications[J]. Chinese Journal of Lasers, 50, 0113008(2023).

[19] Wei C, Xie X J, Wang Z Y et al. 150 GHz high-power photodiode by flip-chip bonding[J]. Journal of Lightwave Technology, 41, 7238-7244(2023).

[20] Zhou Q G, Cross A S, Beling A et al. High-power V-band InGaAs/InP photodiodes[J]. IEEE Photonics Technology Letters, 25, 907-909(2013).

[21] Li Q L, Li K J, Fu Y et al. High-power flip-chip bonded photodiode with 110 GHz bandwidth[J]. Journal of Lightwave Technology, 34, 2139-2144(2016).

[22] Beling A, Cross A S, Zhou Q et al. High-power flip-chip balanced photodetector with >40 GHz bandwidth[C], 352-353(2013).

[23] Xie X J, Zhou Q G, Norberg E et al. High-power heterogeneously integrated waveguide-coupled balanced photodiodes on silicon-on-insulator[C], 468-469(2015).

[24] Zhou Q G, Cross A C, Beling A et al. High power balanced InGaAs/InP photodetector flip-chip bonded on diamond[C], IW5A.5(2013).

[25] Sun K Y, Tzu T C, Costanzo R et al. Ge-on-Si balanced periodic traveling-wave photodetector[C](2019).

[26] Wang Y, Wang Z, Yu Q H et al. High-power photodiodes with 65 GHz bandwidth heterogeneously integrated onto silicon-on-insulator nano-waveguides[J]. IEEE Journal of Selected Topics in Quantum Electronics, 24, 6000206(2018).

[27] Runge P, Zhou G, Ganzer F et al. 100 GHz balanced photodetector module[C], STu3B.4(2018).