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Chinese Optics Letters, Volume. 19, Issue 8, 082503(2021)

Cascaded deep ultraviolet light-emitting diode via tunnel junction

Huabin Yu1, Zhongjie Ren2, Muhammad Hunain Memon1, Shi Fang1, Danhao Wang1, Zhongling Liu1, Haochen Zhang1, Feng Wu3, Jiangnan Dai3, Changqing Chen3, and Haiding Sun1、*
Author Affiliations
  • 1School of Microelectronics, University of Science and Technology of China, Hefei 230026, China
  • 2Department of Electrical and Computer Engineering, University of California San Diego, La Jolla, CA 92037, USA
  • 3Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan 430074, China
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    (a) Schematics of the C-DUV LED and (b) the TJC-DUV LED.

    Fig. 1. (a) Schematics of the C-DUV LED and (b) the TJC-DUV LED.

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    (a) LOPs as functions of the injection currents for the C-DUV LEDs with five QWs, 10 QWs, and the TJC-DUV LED, respectively. (b) The EL spectra of the three DUV LEDs. (c) The LOPs and IQEs as functions of the number of the QWs in the C-DUV LED at 60 mA. (d) The current-voltage characteristics of the three investigated samples.

    Fig. 2. (a) LOPs as functions of the injection currents for the C-DUV LEDs with five QWs, 10 QWs, and the TJC-DUV LED, respectively. (b) The EL spectra of the three DUV LEDs. (c) The LOPs and IQEs as functions of the number of the QWs in the C-DUV LED at 60 mA. (d) The current-voltage characteristics of the three investigated samples.

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    (a) Required input power of the C-DUV LEDs with five QWs, 10 QWs, and TJC-DUV LED, respectively, as a function of output power. (b) The corresponding WPE values of the three devices as functions of current.

    Fig. 3. (a) Required input power of the C-DUV LEDs with five QWs, 10 QWs, and TJC-DUV LED, respectively, as a function of output power. (b) The corresponding WPE values of the three devices as functions of current.

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    Energy band diagram for the TJC-DUV LED at 60 mA.

    Fig. 4. Energy band diagram for the TJC-DUV LED at 60 mA.

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    e–h concentrations within active regions for (a1) the C-DUV LED with five QWs, (b1) the C-DUV LED with 10 QWs, and (c1) the TJC-DUV LED, respectively. The radiative recombination rates within the active regions for (a2) the C-DUV LED with five QWs, (b2) the C-DUV LED with 10 QWs, and (c2) the TJC-DUV LED. The non-radiative recombination rates within the active regions at 60 mA for (d) the C-DUV LED and (e) the TJC-DUV LED. (f) The IQE values of the two devices as functions of current.

    Fig. 5. e–h concentrations within active regions for (a1) the C-DUV LED with five QWs, (b1) the C-DUV LED with 10 QWs, and (c1) the TJC-DUV LED, respectively. The radiative recombination rates within the active regions for (a2) the C-DUV LED with five QWs, (b2) the C-DUV LED with 10 QWs, and (c2) the TJC-DUV LED. The non-radiative recombination rates within the active regions at 60 mA for (d) the C-DUV LED and (e) the TJC-DUV LED. (f) The IQE values of the two devices as functions of current.

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    Huabin Yu, Zhongjie Ren, Muhammad Hunain Memon, Shi Fang, Danhao Wang, Zhongling Liu, Haochen Zhang, Feng Wu, Jiangnan Dai, Changqing Chen, Haiding Sun, "Cascaded deep ultraviolet light-emitting diode via tunnel junction," Chin. Opt. Lett. 19, 082503 (2021)

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    Paper Information

    Category: Optoelectronics

    Received: Dec. 17, 2020

    Accepted: Feb. 2, 2021

    Published Online: Apr. 27, 2021

    The Author Email: Haiding Sun (haiding@ustc.edu.cn)

    DOI:10.3788/COL202119.082503

    Topics

    laser devices and laser physics
    Lasers and Laser Optics
    Laser physics
    laser manufacturing
    Instrumentation, Measurement and Metrology