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Journal of Infrared and Millimeter Waves, Volume. 43, Issue 1, 63(2024)

Correlation between MBE deoxidation conditions and InGaAs/InP APD performance

Zi-Lu GUO1...2,3, Wen-Juan WANG1,4,**, Hui-Dan QU1, Liu--Yan FAN1, Yi-Cheng ZHU1,2, Ya-Jie WANG5, Chang-Lin ZHENG5, Xing-Jun WANG1, Ping-Ping CHEN1,*, and Wei LU1,2,34,*** |Show fewer author(s)
Author Affiliations
  • 1State Key Laboratory of Infrared Physics，Shanghai Institute of Technology Physics，Chinese Academy of Sciences，Shanghai 200083，China
  • 2University of Chinese Academy of Sciences，Beijing 100049，China
  • 3School of Physical Science and Technology，ShanghaiTech University，Shanghai 201210，China
  • 4Shanghai Research Center for Quantum Sciences，Shanghai 201315，China
  • 5State Key Laboratory of Surface Physics and Department of Physics，Fudan University，Shanghai 200438，China
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    Zi-Lu GUO, Wen-Juan WANG, Hui-Dan QU, Liu--Yan FAN, Yi-Cheng ZHU, Ya-Jie WANG, Chang-Lin ZHENG, Xing-Jun WANG, Ping-Ping CHEN, Wei LU. Correlation between MBE deoxidation conditions and InGaAs/InP APD performance[J]. Journal of Infrared and Millimeter Waves, 2024, 43(1): 63

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    Paper Information

    Category: Research Articles

    Received: May. 5, 2023

    Accepted: --

    Published Online: Dec. 26, 2023

    The Author Email: WANG Wen-Juan (wangwj@mail.sitp.ac.cn), CHEN Ping-Ping (ppchen@mail.sitp.ac.cn), LU Wei (luwei@mail.sitp.ac.cn)

    DOI:10.11972/j.issn.1001-9014.2024.01.009

    Topics

    laser devices and laser physics
    Lasers and Laser Optics
    Laser physics
    laser manufacturing
    Instrumentation, Measurement and Metrology