Fig. 1. (a) TEM characterization of PbS quantum dots; (b) Absorption spectra of PbS quantum dots

Fig. 2. Fourier spectrum characterization of the PbS quantum dot film before and after EDT and TBAI treatment

Fig. 3. (a) A picture of the fabricated photodetector; (b) Thickness test results of PbS quantum dot film

Fig. 4. (a) Schematic diagram of device structure; (b) Diagram of energy level relations

Fig. 5. (a) I-V curves at different incident wavelengths; (b) I-V curves at different incident powers

Fig. 6. Linear relationship between device response and incident power

Fig. 7. (a) Responsivity curve of the device; (b) Specific detectivity curve of the device

Fig. 8. Photoelectric response time of the device