Infrared and Laser Engineering, Volume. 51, Issue 10, 20220053(2022)

PbS quantum dot P-N homojunction photodetector

Yunfei Xu1, Zining Liu2, and Peng Wang3
Author Affiliations
  • 1Key Laboratory for Advanced Optical Remote Sensing Technology of Beijing, Beijing Institute of Space Mechanics & Electricity, Beijing 100094, China
  • 2Key Laboratory of Advanced Functional Materials, Ministry of Education of China, Department of Materials and Manufacturing, Beijing University of Technology, Beijing 100124, China
  • 3Key Laboratory of Optoelectronic Technology, Ministry of Education of China, Department of Information Science, Beijing University of Technology, Beijing 100124, China
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    PbS colloidal quantum dots are widely used in the field of photodetectors due to the excellent characteristics including adjustable band gap, solution processable and high absorption coefficient, etc. However, PbS quantum dot photodetectors based on photodiode structure tend to use different materials for the processing of the N-type layer, and thus leading to a much more complexed device design method and fabrication process, which hinders the application of such photodetectors in planar array imaging chips in the future. To simplify the fabrication process, a PbS quantum dot P-N homojunction photodetector is proposed here, in which the P-type and N-type layer are prepared by only one process. Results show that the PbS quantum dot photodetector has a good linear response to different incident intensity. The responsivity of the device is about 0.11 A/W and the specific detectivity is approximately 3.41 × 1011 Jones at 700 nm under the reverse bias voltage of 0.5 V, which indicate the excellent performance of the detector in weak illumination conditions. It can be concluded that the PbS quantum dot P-N homojunction photodetector proposed here can promote its development in the field of planar array imaging and is great helpful to the development of planar array imaging chip techniques based on colloidal quantum dots.

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    Yunfei Xu, Zining Liu, Peng Wang. PbS quantum dot P-N homojunction photodetector[J]. Infrared and Laser Engineering, 2022, 51(10): 20220053

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    Paper Information

    Category: Optical devices

    Received: Feb. 20, 2022

    Accepted: --

    Published Online: Jan. 6, 2023

    The Author Email:

    DOI:10.3788/IRLA20220053

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