Infrared and Laser Engineering, Volume. 51, Issue 7, 20220277(2022)
Research progress on local field characterization of mercury cadmium telluride infrared photodetectors (invited)
Fig. 1. Development history of HgCdTe infrared detection technology and novel local field modulation concept
Fig. 2. (a) The laser is focused through the objective lens and remains in position, and the sample moves with the piezo-driven stage to achieve laser scanning[33]; (b) The sample is held stationary and the laser is reflected by a piezoelectrically driven reflector lens onto the sample surface for scanning [34]; (c) Schematic diagram and typical SPCM curve of laser beam induced current[35]
Fig. 3. SPCM analysis of B+ ion-implanted mid-wavelength HgCdTe devices SPCM curve at (a) 300 K and (b) 87 K, respectively; (c) schematic of the p-n-on-p junction transition model of the device at 87 K, 300 K; (d) Measured curves of Hall coefficients of mid-wavelength and long-wavelength p-type HgCdTe materials vs temperature; (e) SPCM simulation curve at 300 K for different defect concentrations in the ion injection region; (f) SPCM simulation curve at 87 K for non-uniform doping concentration[39]
Fig. 4. SPCM analysis of laser punched junction-forming HgCdTe devices. (a) Experimental SPCM curve at 300 K; (b) Experimental SPCM curve at 87 K; (c) Model of p-n junction transition for sample devices at low and room temperatures; (d) Temperature dependence of Hall coefficient; (e) 300 K laser perforated junction SPCM simulation and experimental results curves; (f) 87 K laser perforated junction SPCM simulation and experimental results curves[35]
Fig. 5. SEM image of HgCdTe photodiode array mesa etching. (a) Wet etching; (b) Dry and wet combined etching; (c) Dry etching[48]
Fig. 6. SPCM analysis of dry etched HgCdTe devices. (a) SPCM curves of p-type HgCdTe samples with different etching temperatures measured at 81 K; (b) Damage junction depth (left) and SPCM signal peaks (right) as a function of etching temperature; (c) Experimental signal distribution for the first cycle at different etching temperatures; (d) Simulation of SPCM signal distribution for devices with different electron concentrations; (e) Scan of the first etched notch with different electron concentrations and simulated electric field as a function of laser beam position[55]
Fig. 7. (a) Electric field distribution of the protection ring structure [56]; (b) Simulated plots of carrier density, electric field and potential at −7 V for the pBp-APD structure[57]; (c) Band gap in the absorption region of the variable component APD device[58]; (d) heterojunction P-i-N diode architecture [59]; (e) APD gain characterization based on local field theory [20]; (f) Schematic of the local field structure HgCdTe photodiode[60]
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Shuning Liu, Qianying Tang, Qing Li. Research progress on local field characterization of mercury cadmium telluride infrared photodetectors (invited)[J]. Infrared and Laser Engineering, 2022, 51(7): 20220277
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Received: Apr. 23, 2022
Accepted: --
Published Online: Dec. 20, 2022
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