Fig. 1. Schematic diagram of the GaSb single crystal growth system structure

Fig. 2. Photos of 6-inch Te-GaSb single crystal （a） and wafer （b）

Fig. 3. Simulation results of thermal field characteristics for 6-inch GaSb growth. （a） Temperature distribution and heat flux direction in the crystallization zone； （b） variation of the solid-liquid interface deflection Y with the radial position X of the crystal under different growth lengths

Fig. 4. Distribution of melt plane velocity V_x-V_y and flow patterns for growth diameters of 3-inch （a） and 6-inch （b）

Fig. 5. Variation of the solid-liquid interface deflection Y with the radial position X of the crystal under different pulling rates （a） and crystal rotation rates （b）， as well as the melt convection at crystal rotation rates of 2 r/min （c） and 6 r/min （d）

Fig. 6. Distribution of dislocation etch pit density （a） and （400） plane rocking curve （b） for 6-inch Te-GaSb single crystal

Fig. 7. Distribution of oxide layer thickness （a） and roughness （b） on the surface of 6-inch Te-GaSb （100） wafer