Gallium antimonide has been widely recognized for its superior physical properties and significant application value. The first domestic 6-inch n-type Te-doped GaSb single crystal ingot was successfully grown by the research team using the liquid encapsulated Czochralski method. High-quality 6-inch GaSb wafers are prepared， and the crystal quality and wafer surface properties are studied. The full width at half maximum of the rocking curve for the （400） plane of the GaSb substrate is only 20″， and the average dislocation density is approximately 3 177 cm?2. The surface roughness （Rq） is 0.42 nm， and the oxide layer thickness is 2.92 nm. These results demonstrate the high crystalline quality and excellent surface morphology of the 6-inch GaSb single crystal. In addition， numerical simulations of the growth process of the 6-inch GaSb single crystal are conducted， revealing the thermal field distribution， flow field distribution， and solid-liquid interface deflection. These findings provide new insights for the high-quality growth of GaSb materials and lay a foundation for the industrial application of large-sized crystals.