High Power Laser and Particle Beams, Volume. 37, Issue 5, 051003(2025)

Electron radiation effects on a 4H-SiC bipolar phototransistor

Sien Ye1,2, Danyang Huang1,2, Xianghe Fu1,2, Xiaolong Zhao1,2、*, and Yongning He1,2
Author Affiliations
  • 1Faculty of Electronic and Information Engineering, Xi’an Jiaotong University, Xi’an 710049, China
  • 2The Key Lab of Micro-Nano Electronics and System Integration, Xi’an Jiaotong University, Xi’an 710049, China
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    Sien Ye, Danyang Huang, Xianghe Fu, Xiaolong Zhao, Yongning He. Electron radiation effects on a 4H-SiC bipolar phototransistor[J]. High Power Laser and Particle Beams, 2025, 37(5): 051003

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    Paper Information

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    Received: Oct. 16, 2024

    Accepted: Mar. 3, 2025

    Published Online: May. 22, 2025

    The Author Email: Xiaolong Zhao (zhaoxiaolong@xjtu.edu.cn)

    DOI:10.11884/HPLPB202537.240362

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