High Power Laser and Particle Beams, Volume. 37, Issue 5, 051003(2025)
Electron radiation effects on a 4H-SiC bipolar phototransistor
[1] Zheng Wei, Zhang Naiji, Zhu Siqi. Extreme ultraviolet detectors: a review[J]. Chinese Journal of Lasers, 51, 0701008(2024).
[4] [4] Jin Hao. Research on CMOS image sens of space radiation effect[D]. Harbin: Harbin Institute of Technology, 2012
[6] Su Linlin, Yang Chengdong. Short-wavelength SiC ultraviolet single photon detector based on hole-dominated avalanche multiplication[J]. Chinese Journal of Lasers, 50, 1801001(2023).
[8] Zhang Feng, Fu Zhao, Zhang Zeyang. Research progress of wide band gap semiconductor SiC ultraviolet photodetectors[J]. Journal of Xiamen University (Natural Science), 62, 254-268(2023).
[9] Guo Shuwen, Zhao Xiaolong, Fu Xianghe et al. High-temperature performance of the 4H-SiC n-p-n bipolar UV phototransistor[J]. IEEE Sensors Journal, 22, 21613-21618(2022).
[10] Guo Shuwen, Zhao Xiaolong, He Yongning et al. Low-voltage and high-gain ultraviolet detector based on 4H-SiC n-p-n bipolar phototransistor[J]. IEEE Transactions on Electron Devices, 68, 2342-2346(2021).
[11] Dong Peng, Qin Yazhou, Yu Xuegong et al. Electron radiation effects on the 4H-SiC PiN diodes characteristics: an insight from point defects to electrical degradation[J]. IEEE Access, 7, 170385-170391(2019).
[15] Dong Peng, Yan Xiaolan, Zhang Lin et al. Relating gain degradation to defects production in neutron-irradiated 4H-SiC transistors[J]. IEEE Transactions on Nuclear Science, 68, 312-317(2021).
[16] Jia Xianghong, Zou Hong, Xu Feng. Research progress of space electrons radiation risk and its protection strategy[J]. Space Medicine & Medical Engineering, 27, 453-457(2014).
[17] Zhang Xianliang, Zhu Minbo, Li Qin. Research on the mechanism and protection technology of space irradiation[J]. Space Electronic Technology, 4, 17-20,30(2007).
[19] [19] Masud A, Islam S, Khosru Q D M. Modified EbersMoll model of magic bipolar transist[C]Proceedings of 2015 IEEE International Conference on Electron Devices SolidState Circuits. 2015: 812815.
[20] [20] Liu Enke, Zhu Bingsheng, Luo Jinsheng. Semiconduct physics[M]. 7th ed. Beijing: Publishing House of Electronics Industry, 2008
[23] [23] Liu Chaoming. Radiation damage effects deep level defects in bipolar junction transist[D]. Harbin: Harbin Institute of Technology, 2013
[24] Shang Yechun, Zhang Yimen, Zhang Yuming. Analysis of the SiC irradiation resistance[J]. Journal of Xidian University, 26, 807-810(1999).
[25] [25] Ma Guoliang, Zhang Yanqing, Li Heyi, et al. Effect of primary knockedon atoms on conductivity compensation in Ntype 4HSiC irradiated by 1 MeV electrons, 25 MeV C ions 40 MeV Si ions[C]Proceedings of 2019 IEEE 26th International Symposium on Physical Failure Analysis of Integrated Circuits. 2019: 15.
[26] Liu Xiaoxing, Yuan Zhiming, Li Yuebin. Effect of 10 MeV high-energy electron irradiation on the crystal structure and electrical properties of 4H-SiC[J]. Journal of Capital Normal University (Natural Science Edition), 43, 29-35,41(2022).
[27] Castaldini A, Cavallini A, Rigutti L et al. Deep levels by proton and electron irradiation in 4H–SiC[J]. Journal of Applied Physics, 98, 053706(2005).
Get Citation
Copy Citation Text
Sien Ye, Danyang Huang, Xianghe Fu, Xiaolong Zhao, Yongning He. Electron radiation effects on a 4H-SiC bipolar phototransistor[J]. High Power Laser and Particle Beams, 2025, 37(5): 051003
Category:
Received: Oct. 16, 2024
Accepted: Mar. 3, 2025
Published Online: May. 22, 2025
The Author Email: Xiaolong Zhao (zhaoxiaolong@xjtu.edu.cn)