High Power Laser and Particle Beams, Volume. 37, Issue 5, 051003(2025)

Electron radiation effects on a 4H-SiC bipolar phototransistor

Sien Ye1,2, Danyang Huang1,2, Xianghe Fu1,2, Xiaolong Zhao1,2、*, and Yongning He1,2
Author Affiliations
  • 1Faculty of Electronic and Information Engineering, Xi’an Jiaotong University, Xi’an 710049, China
  • 2The Key Lab of Micro-Nano Electronics and System Integration, Xi’an Jiaotong University, Xi’an 710049, China
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    Figures & Tables(11)
    Schematic of 4H-SiC npn phototransistor structure
    UV response test system of phototransistor detector
    Phototransistor dark currents before and after irradiation
    Phototransistor I-V characteristics before and after irradiation at different light densities
    Net photocurrent versus UV intensity of phototransistors before and after irradiation
    UV response of irradiated phototransistors at different bias voltages
    Switching response of phototransistors before and after irradiation
    Circuit model of a phototransistor with base floating during illumination
    I-V curves of phototransistor UV response from experimental test and model simulation before irradiation
    I-V curves of phototransistor UV response after irradiation with experimental test and model simulation
    • Table 1. Comparison of detector performance before and after irradiation

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      Table 1. Comparison of detector performance before and after irradiation

      dark current (Vce=5 V)/Aphotocurrent (Vce=5 V)/Aphoto responsivity/(A·W−1)
      110 µW/cm2220 µW/cm2Vce=3VVce=4VVce=5V
      pre-irradiation5.86×10−87.43×10−71.22×10−631.09431.28831.306
      electron-irradiated3.73×10−119.05×10−81.21×10−72.2512.9733.723
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    Sien Ye, Danyang Huang, Xianghe Fu, Xiaolong Zhao, Yongning He. Electron radiation effects on a 4H-SiC bipolar phototransistor[J]. High Power Laser and Particle Beams, 2025, 37(5): 051003

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    Paper Information

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    Received: Oct. 16, 2024

    Accepted: Mar. 3, 2025

    Published Online: May. 22, 2025

    The Author Email: Xiaolong Zhao (zhaoxiaolong@xjtu.edu.cn)

    DOI:10.11884/HPLPB202537.240362

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