High Power Laser and Particle Beams, Volume. 37, Issue 5, 051003(2025)
Electron radiation effects on a 4H-SiC bipolar phototransistor
Fig. 3. Phototransistor dark currents before and after irradiation
Fig. 4. Phototransistor I-V characteristics before and after irradiation at different light densities
Fig. 5. Net photocurrent versus UV intensity of phototransistors before and after irradiation
Fig. 6. UV response of irradiated phototransistors at different bias voltages
Fig. 7. Switching response of phototransistors before and after irradiation
Fig. 8. Circuit model of a phototransistor with base floating during illumination
Fig. 9. I-V curves of phototransistor UV response from experimental test and model simulation before irradiation
Fig. 10.
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Sien Ye, Danyang Huang, Xianghe Fu, Xiaolong Zhao, Yongning He. Electron radiation effects on a 4H-SiC bipolar phototransistor[J]. High Power Laser and Particle Beams, 2025, 37(5): 051003
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Received: Oct. 16, 2024
Accepted: Mar. 3, 2025
Published Online: May. 22, 2025
The Author Email: Xiaolong Zhao (zhaoxiaolong@xjtu.edu.cn)