[1] Levinshtein M E, Rumyantsev S L, Shur M S[M]. Properties of advanced semiconductor materials: GaN, AlN, InN, BN, SiC, SiGe(2001).

[2] Rais-Zadeh M, Gokhale V J, Ansari A et al. Gallium nitride as an electromechanical material[J]. Journal of Microelectromechanical Systems, 23, 1252-1271(2014).

[3] Dadgar A, Hempel T, Bläsing J et al. Improving GaN-on-silicon properties for GaN device epitaxy[J]. Physica Status Solidi C, 8, 1503-1508(2011).

[4] Harima H. Properties of GaN and related compounds studied by means of Raman scattering[J]. Journal of Physics: Condensed Matter, 14, R967-R993(2002).

[5] Pearton S J[M]. GaN and related materials II(2000).

[6] Asad M, Li Q, Lee C H et al. Integration of GaN light-emitting diodes with a-Si: H thin-film transistors for flexible displays[J]. Nanotechnology, 30, 324003(2019).

[7] Kim T I, Jung Y H, Song J Z et al. High-efficiency, microscale GaN light-emitting diodes and their thermal properties on unusual substrates[J]. Small, 8, 1643-1649(2012).

[8] Behringer M, König H. Blue high-power laser diodes: beam sources for novel applications: overview and outlook[J]. PhotonicsViews, 17, 60-63(2020).

[9] Nam O H, Ha K H, Kwak J S et al. Characteristics of GaN-based laser diodes for post-DVD applications[J]. Physica Status Solidi (a), 201, 2717-2720(2004).

[10] Keshmiri N, Wang D Q, Agrawal B et al. Current status and future trends of GaN HEMTs in electrified transportation[J]. IEEE Access, 8, 70553-70571(2020).

[11] Mishra U K, Parikh P, Wu Y F. AlGaN/GaN HEMTs: an overview of device operation and applications[J]. Proceedings of the IEEE, 90, 1022-1031(2002).

[12] Babichev A V, Zhang H, Lavenus P et al. GaN nanowire ultraviolet photodetector with a graphene transparent contact[J]. Applied Physics Letters, 103, 201103(2013).

[13] Li J X, Liu Z, Ye S C et al. Forward current transport in P-I-N type GaN ultraviolet detector[J]. Laser & Optoelectronics Progress, 60, 2304002(2023).

[14] Gundimeda A, Krishna S, Aggarwal N et al. Fabrication of non-polar GaN based highly responsive and fast UV photodetector[J]. Applied Physics Letters, 110, 103507(2017).

[15] Zhuo R R, Zeng L H, Yuan H Y et al. In-situ fabrication of PtSe2/GaN heterojunction for self-powered deep ultraviolet photodetector with ultrahigh current on/off ratio and detectivity[J]. Nano Research, 12, 183-189(2019).

[16] Cao D Z, Xiao H D, Xu H Z et al. Enhancing the photocatalytic activity of GaN by electrochemical etching[J]. Materials Research Bulletin, 70, 881-886(2015).

[17] Jung H S, Hong Y J, Li Y R et al. Photocatalysis using GaN nanowires[J]. ACS Nano, 2, 637-642(2008).

[18] Ren B F, Zhang X L, Zhao M et al. Significant enhancement in photocatalytic activity of (GaN)1-x(ZnO)x nanowires via solubility and crystal facet tailoring[J]. AIP Advances, 8, 015206(2018).

[19] Arakawa Y, Ueno K, Imabeppu H et al. Electrical properties of Si-doped GaN prepared using pulsed sputtering[J]. Applied Physics Letters, 110, 042103(2017).

[20] Tang D S, Hua Y C, Zhou Y G et al. Thermal conductivity modeling of GaN films[J]. Acta Physica Sinica, 70, 045101(2021).

[21] Ho V X, Wang Y, Ryan B et al. Observation of optical gain in Er-doped GaN epilayers[J]. Journal of Luminescence, 221, 117090(2020).

[22] Hu L, Zhang L Q, Liu J P et al. High power GaN-based blue lasers[J]. Chinese Journal of Lasers, 47, 0701025(2020).

[23] Tetsuo N, Nobuyuki I, Kazuyoshi T et al. Wide range doping control and defect characterization of GaN layers with various Mg concentrations[J]. Journal of Applied Physics, 124, 165706(2018).

[24] Kozodoy P, Xing H L, DenBaars S P et al. Heavy doping effects in Mg-doped GaN[J]. Journal of Applied Physics, 87, 1832-1835(2000).

[25] Polyakov A Y, Smirnov N B, Govorkov A V et al. Properties of Fe-doped semi-insulating GaN structures[J]. Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, 22, 120-125(2004).

[26] Su H K, Xu S R, Tao H C et al. Improving the current spreading by Fe doping in n-GaN layer for GaN-based ultraviolet light-emitting diodes[J]. IEEE Electron Device Letters, 42, 1346-1349(2021).

[27] Zeng C H, Lin W K, He T et al. Ultraviolet-infrared dual-color photodetector based on vertical GaN nanowire array and graphene[J]. Chinese Optics Letters, 18, 112501(2020).

[28] Maskar E, Lamrani A F, Belaiche M et al. Electronic, magnetic, optical and transport properties of wurtzite-GaN doped with rare earth (RE=Pm, Sm, and Eu): first principles approach[J]. Surfaces and Interfaces, 24, 101051(2021).

[29] Eisa M H. Electronic structure and optical properties of Cd co-doped wurtizte GaN exposed from first principles study[J]. Results in Physics, 13, 102330(2019).

[30] Lantri M, Boukortt A, Meskine S et al. Effect of erbium doping on GaN electronic and optical properties: first-principles study[J]. Modern Physics Letters B, 33, 1950327(2019).

[31] Khan M J I, Kanwal Z, Latif A et al. Investigations on electronic structure, magnetic and optical properties of C and Ti co-doped zincblende GaN for optoelectronic applications[J]. Optik, 231, 166425(2021).

[32] Shen P F, Li E L, Zhang L et al. Electronic structures and physical properties of Mg, C, and S doped g-GaN[J]. Superlattices and Microstructures, 156, 106930(2021).

[33] Belhachi S, Lazreg A, Dridi Z et al. Electronic and magnetic investigations of rare-earth Tm-doped AlGaN ternary alloy[J]. Journal of Superconductivity and Novel Magnetism, 31, 1767-1771(2018).

[34] Hoang K. Rare-earth defects in GaN: a systematic investigation of the lanthanide series[J]. Physical Review Materials, 6, 044601(2022).

[35] Lo F Y, Huang C D, Chou K C et al. Structural, optical, and magnetic properties of highly-resistive Sm-implanted GaN thin films[J]. Journal of Applied Physics, 116, 043909(2014).

[36] Melton A G, Liu Z Q, Kucukgok B et al. Properties of MOCVD-grown GaN∶Gd films for spintronic devices[J]. MRS Online Proceedings Library, 1396, 164-168(2012).

[37] Wang S, Xie X J, Liu H et al. Structural and magnetic properties of Dy-implanted GaN films[J]. Journal of Alloys and Compounds, 712, 482-485(2017).

[38] Kohn W, Becke A D, Parr R G. Density functional theory of electronic structure[J]. The Journal of Physical Chemistry, 100, 12974-12980(1996).

[39] Zakrzewski T, Boguslawski P. Electronic structure of transition metal ions in GaN and AlN: comparing GGA+U with experiment[J]. Journal of Alloys and Compounds, 664, 565-579(2016).

[40] Larson P, Lambrecht W R L, Chantis A et al. Electronic structure of rare-earth nitrides using the LSDA+U approach: importance of allowing 4f orbitals to break the cubic crystal symmetry[J]. Physical Review B, 75, 045114(2007).

[41] Monkhorst H J, Pack J D. Special points for Brillouin-zone integrations[J]. Physical Review B, 13, 5188-5192(1976).

[42] Zhang L D, Wang M W, Liu S X et al. Effect of host-doping ions on the afterglow property of (Y, Rn)2O2S∶Sm3＋, Ti4＋, Mg2＋(Rn＝La, Gd, Lu, Ga, Al) red phosphors[J]. Chinese Journal of Engineering, 30, 49-52(2008).

[43] Cui X Y, Medvedeva J E, Delley B et al. Spatial distribution and magnetism in poly-Cr-doped GaN from first principles[J]. Physical Review B, 75, 155205(2007).

[44] Xiong Z H, Jiang F Y, Wan Q X et al. Influence of crystal structure and formation energies of impurities (Mg, Zn and Ca) in zinc blende GaN[J]. Transactions of Nonferrous Metals Society of China, 16, s854-s857(2006).

[45] Maruska H P, Tietjen J J. The preparation and properties of vapor-deposited single-crystal-line GaN[J]. Applied Physics Letters, 15, 327-329(1969).

[46] Brown G F, Wu J. Third generation photovoltaics[J]. Laser & Photonics Reviews, 3, 394-405(2009).

[47] Pankove J I, Berkeyheiser J E, Maruska H P et al. Luminescent properties of GaN[J]. Solid State Communications, 8, 1051-1053(1970).

[48] Gao J H, Wang Y, Liu Y B et al. Enhancing dielectric permittivity for energy-storage devices through tricritical phenomenon[J]. Scientific Reports, 7, 40916(2017).