First Principles Study on Electronic Structure and Optical Properties of Lu Doped GaN at Different Doping Concentration

Shasha Fu; Qingquan Xiao; Huazhu Tang; Yunmei Yao; Mengzhen Zou; Jianfeng Ye; Quan Xie

doi:10.3788/AOS231938

Acta Optica Sinica, Volume. 44, Issue 9, 0916001(2024)

First Principles Study on Electronic Structure and Optical Properties of Lu Doped GaN at Different Doping Concentration

Shasha Fu, Qingquan Xiao^*, Huazhu Tang, Yunmei Yao, Mengzhen Zou, Jianfeng Ye, and Quan Xie

Institute of Advanced Optoelectronic Materials and Technology, College of Big Data and Information Engineering, Guizhou University, Guiyang 550025, Guizhou, China

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Shasha Fu, Qingquan Xiao, Huazhu Tang, Yunmei Yao, Mengzhen Zou, Jianfeng Ye, Quan Xie. First Principles Study on Electronic Structure and Optical Properties of Lu Doped GaN at Different Doping Concentration[J]. Acta Optica Sinica, 2024, 44(9): 0916001

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Paper Information

Category: Materials

Received: Dec. 15, 2023

Accepted: Feb. 23, 2024

Published Online: May. 15, 2024

The Author Email: Qingquan Xiao (qqxiao@gzu.edu.cn)

DOI:10.3788/AOS231938

CSTR:32393.14.AOS231938

Topics

laser devices and laser physics

Lasers and Laser Optics

Laser physics

laser manufacturing

Instrumentation, Measurement and Metrology