Chinese Journal of Lasers, Volume. 43, Issue 10, 1003001(2016)

Influence of Oxygenating Port Position on Properties of HfO2 Films Deposited by Electron Beam Evaporation

Zheng Ruxi1,2、*, Yi Kui1, Fan Zhengxiu1, Shao Jianda1, and Tu Feifei1,2
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  • 1[in Chinese]
  • 2[in Chinese]
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    Oxygenating port position directly affects the distribution of oxygen in the vacuum chamber, and then has significant impact on the optical performance of the film. To study the influence of oxygenating port position on the properties of HfO2 films, the HfO2 films are deposited on the silica substrates by electron beam evaporation technology at two typical oxygenating port positions. Ultraviolet-visible spectrophotometer and X-ray photoelectron spectrometer are employed to study the optical properties and the chemical components of HfO2 films prepared at different oxygenating port positions. The experimental results show that providing oxygenating port in the vicinity of the substrate is more conducive to obtain good compactness and full oxidation of HfO2 films. A simplified model is established according to the configuration of the actual vacuum chamber. The turbulence model of k-ε quadratic equation is applied to carry on three-dimensional numerical simulation calculation on the distribution of oxygen in the coating process. The theoretical calculation fits well with the experimental results.

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    Zheng Ruxi, Yi Kui, Fan Zhengxiu, Shao Jianda, Tu Feifei. Influence of Oxygenating Port Position on Properties of HfO2 Films Deposited by Electron Beam Evaporation[J]. Chinese Journal of Lasers, 2016, 43(10): 1003001

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    Paper Information

    Category: materials and thin films

    Received: Apr. 18, 2016

    Accepted: --

    Published Online: Oct. 12, 2016

    The Author Email: Ruxi Zheng (rxzheng@siom.ac.cn)

    DOI:10.3788/cjl201643.1003001

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