Acta Photonica Sinica, Volume. 53, Issue 9, 0913002(2024)
Process Development of Low-loss Thick Silicon Nitride Waveguide on 8-inch Wafer
Figures & Tables(18)
Fig. 9. Checkered morphology under layout， optical microscopy， and scanning electron microscopy
Fig. 12. The measurement result of the Si3N4 waveguide with a cross-sectional size of 0.8 µm×0.8 µm
Table 1. Parameters of the cut-back structure
View tableView in ArticleTable 1. Parameters of the cut-back structure
Number Length/cm Bend waveguide radius R/μm Waveguide 1 12.72 100 Waveguide 2 17.62 100 Waveguide 3 22.52 100 Waveguide 4 27.42 100
Table 2. Structural parameters of the bending waveguides
View tableView in ArticleTable 2. Structural parameters of the bending waveguides
Bend waveguide radius Bend Number of 90° arcs 50 μm Bend 1 24 Bend 2 72 Bend 3 120 Bend 4 168 80 μm Bend 1 24 Bend 2 72 Bend 3 120 Bend 4 168
Table 3. Transmission and coupling losses of silicon nitride waveguide in the wavelength range of 1 490
~ 1 580 nmView tableView in ArticleTable 3. Transmission and coupling losses of silicon nitride waveguide in the wavelength range of 1 490
~ 1 580 nmWavelength/nm Transmission loss/（dB·cm-1） Coupling loss/dB 1 490 0.258 5 7.27 1 500 0.297 2 7.33 1 510 0.292 1 7.28 1 520 0.228 7.21 1 530 0.154 4 6.98 1 540 0.116 7.26 1 550 0.087 6.87 1 560 0.076 6.946 1 570 0.067 2 6.867 1 580 0.062 6.83
Table 4. Propagation losses at 1 550 nm for Si3N4 waveguides
View tableView in ArticleTable 4. Propagation losses at 1 550 nm for Si3N4 waveguides
Team Wafer size/inch Deposition method Waveguide cross-section dimensions/μm2 Transmission loss HUANG Ying［ 8 ］8 PECVD 0.4×1.0 3.75 dB/cm@1 550 nm SHENG Chunmao［ 19 ］8 PECVD 0.4×0.7 2.1 dB/cm@1 550 nm WANG Linghua［ 20 ］4 PECVD 0.6×1.5 0.58 dB/cm@1 550 nm KRÜCKEL C Jl［ 9 ］4 LPCVD 0.7×1.65 1.0 dB/cm@1 550 nm EPPING J P ［ 13 ］4 LPCVD 0.9×1.2 0.4 dB/cm@1 560 nm LIU Junqiu ［ 14 ］4 LPCVD 0.9×2.1 0.015 dB/cm@1 630 nm This work 8 LPCVD 0.8×0.8 0.087 dB/cm@1 550 nm
Table 5. Transmission loss of 800 nm thick silicon nitride waveguides at different positions on the 8-inch wafer
View tableView in ArticleTable 5. Transmission loss of 800 nm thick silicon nitride waveguides at different positions on the 8-inch wafer
Location Transmission loss/（dB/cm@1 550 nm） Coupling loss/dB C2 0.092 7.04 C4 0.087 6.87 C6 0.093 7.13 A4 0.089 6.72 E4 0.12 7.23
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Qingyu CONG, Zhaoyi LI, Jingjie ZHOU, Zuowen FAN, Lianxi JIA, Ting HU. Process Development of Low-loss Thick Silicon Nitride Waveguide on 8-inch Wafer[J]. Acta Photonica Sinica, 2024, 53(9): 0913002
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Received: Feb. 2, 2024
Accepted: Apr. 1, 2024
Published Online: Nov. 13, 2024
The Author Email: Lianxi JIA (jlxlianye@gmail.com)
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