Photomask Inspection in Integrated Circuits Using Structured Illumination Microscopy

Xin Wei; Zexu Liu; Ziyi Zhang; Yunyi Chen; Wenhe Yang; Jing Cao; Nan Lin

doi:10.3788/AOS240585

Acta Optica Sinica, Volume. 44, Issue 11, 1118001(2024)

Photomask Inspection in Integrated Circuits Using Structured Illumination Microscopy

Xin Wei^1,2,3, Zexu Liu^2,3, Ziyi Zhang^2,3, Yunyi Chen^1,2,3, Wenhe Yang^1,2,3, Jing Cao^2,3、*, and Nan Lin^1,2,3

Author Affiliations

¹School of Microelectronics, Shanghai University, Shanghai 200444, China

²State Key Laboratory of High Field Laser Physics, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, China

³Key Laboratory of Ultra-intense Laser Science and Technology (CAS), Shanghai 201800, China

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Figures & Tables(9)

Fig. 1. Principle of transmission SIM. (a) Bandwidth of coherence system (circular aperture); (b) mixed spectrum acquisition of sample high frequency information; (c) effective bandwidth after SIM reconstruction

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Fig. 2. Schematic diagram of DMD modulated laser beam

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Fig. 3. DMD pattern and blaze criterion. (a) DMD pattern at 0° orientation; (b) relationship between blaze criterion $μ$ and angle of incidence $α$

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Fig. 4. SIM reconstruction method comparison and MAP-SIM reconstruction flow chart. (a) Reconstruction images of SR-SIM (left) and MAP-SIM (right); (b) MAP-SIM reconstruction process in SIMToolbox^[20]

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Fig. 5. Images of USAF 1951 resolution test target. (a) 0 order; (b) ±1 order; (c) ±2 order; (d) ±3 order; (e) ±4 order

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Fig. 6. Gray value analysis of images of USAF 1951 resolution test target. (a) 8-6 horizontal lines; (b) 8-6 vertical lines; (c) 9-1 horizontal lines; (d) 9-1 vertical lines; (e) 9-2 horizontal lines; (f) 9-2 vertical lines; (g) 9-3 horizontal lines; (h) 9-3 vertical lines

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Fig. 7. SIM resolution analysis. (a) Comparation of theoretical and experimental SIM resolution; (b) relationships among NA, $γ$ and resolution of SIM

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Table 1. Line widths of pairs from group 6 to group 9 in USAF 1951 resolution test target
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Table 1. Line widths of pairs from group 6 to group 9 in USAF 1951 resolution test target
Element number Group 6 Group 7 Group 8 Group 9
1 7.81 3.91 1.95 0.98
2 6.96 3.47 1.74 0.87
3 6.20 3.11 1.55 0.78
4 5.52 2.76 1.38 —
5 4.90 2.46 1.23 —
6 4.39 2.19 1.10 —

Table 2. Relationships among the experimental SIM resolution, diffraction order and γ
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Table 2. Relationships among the experimental SIM resolution, diffraction order and γ
Diffraction order γ /（°） Experimental SIM resolution /μm
0 0 1.38
±1 2.07 1.10
±2 3.93 0.98
±3 5.73 0.87
±4 8.02 0.78

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Xin Wei, Zexu Liu, Ziyi Zhang, Yunyi Chen, Wenhe Yang, Jing Cao, Nan Lin. Photomask Inspection in Integrated Circuits Using Structured Illumination Microscopy[J]. Acta Optica Sinica, 2024, 44(11): 1118001

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Paper Information

Category: Microscopy

Received: Jan. 29, 2024

Accepted: Mar. 8, 2024

Published Online: Jun. 7, 2024

The Author Email: Cao Jing (caojing0606@siom.ac.cn)

DOI:10.3788/AOS240585

CSTR:32393.14.AOS240585

Topics

laser devices and laser physics

Lasers and Laser Optics

Laser physics

laser manufacturing

Instrumentation, Measurement and Metrology

Table 1. Line widths of pairs from group 6 to group 9 in USAF 1951 resolution test target

Table 1. Line widths of pairs from group 6 to group 9 in USAF 1951 resolution test target

Table 2. Relationships among the experimental SIM resolution, diffraction order and γ

Table 2. Relationships among the experimental SIM resolution, diffraction order and γ