Chinese Journal of Lasers, Volume. 44, Issue 1, 102016(2017)

Dicing of Sapphire Wafer with All-Fiber Picosecond Laser

Hu Xiaobao1、*, Hao Qiang1, Guo Zhengru1, and Zeng Heping1,2
Author Affiliations
  • 1[in Chinese]
  • 2[in Chinese]
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    Figures & Tables(7)
    Schematic of the experimental setup
    Stability of the laser system. (a) Repetition frequency stability, the left inset is the mode locked pulse train at 20 MHz repetition rate, and the right inset shows 8 pulses in a single pulse train at 100 kHz repetition rate; (b) power stability
    (a) Schematic for dicing; (b) schematic for splitting
    Extrinsic feature of chips diced at different average power. (a) 0.27 W; (b) 0.32 W; (c) 0.4 W; (d) 0.5 W
    Extrinsic feature of chips diced by laser with different spot roundness. (a) Less than 80%; (b) about 85%; (c) more than 95%
    Cross sections of chips diced with different number of pulses. (a) 2 pulses; (b) 4 pulses; (c) 6 pulses
    • Table 1. Yield rate of LED chips diced with different number of pulses

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      Table 1. Yield rate of LED chips diced with different number of pulses

      Sample No.Yield rate /%Sample No.Yield rate /%
      197.64699.44
      298.34799.58
      396.80899.05
      498.05999.17
      598.621099.58
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    Hu Xiaobao, Hao Qiang, Guo Zhengru, Zeng Heping. Dicing of Sapphire Wafer with All-Fiber Picosecond Laser[J]. Chinese Journal of Lasers, 2017, 44(1): 102016

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    Paper Information

    Special Issue:

    Received: Jun. 24, 2016

    Accepted: --

    Published Online: Jan. 10, 2017

    The Author Email: Xiaobao Hu (xiaobao_hu@foxmail.com)

    DOI:10.3788/CJL201744.0102016

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