Journal of Inorganic Materials, Volume. 38, Issue 4, 378(2023)

Recent Progress in Optoelectronic Artificial Synapse Devices

Jianyu DU1,2 and Chen GE2,3、*
Author Affiliations
  • 11. School of Science, Tianjin University of Technology, Tianjin 300382, China
  • 22. Institute of Physics, Chinese Academy of Sciences, Beijing 100039, China
  • 33. University of Chinese Academy of Sciences, Beijing 100049, China
  • show less
    References(51)

    [3] LI H, JIANG X, YE W et al. Fully photon modulated heterostructure for neuromorphic computing[J]. Nano Energy, 65: 10400(2019).

    [7] WU C, KIM T W, CHOI H Y et al. Flexible three-dimensional artificial synapse networks with correlated learning and trainable memory capability[J]. Nat. Commun., 8: 752(2017).

    [12] CHOI C, CHOI M K, LIU S et al. Human eye-inspired soft optoelectronic device using high-density MoS2-graphene curved image sensor array[J]. Nat. Commun., 8: 1664(2017).

    [16] CHOI C, LEEM J, KIM M S et al. Curved neuromorphic image sensor array using a MoS2-organic heterostructure inspired by the human visual recognition system[J]. Nat. Commun., 11: 5934(2020).

    [19] GE C, LI G, ZHOU Q L et al. Gating-induced reversible HxVO2 phase transformations for neuromorphic computing[J]. Nano Energy, 67: 104268(2020).

    [20] YU J J, LIANG L Y, HU L X et al. Optoelectronic neuromorphic thin-film transistors capable of selective attention and with ultra-low power dissipation[J]. Nano Energy, 62: 772(2019).

    [27] LI G, XIE D, ZHONG H et al. Photo-induced non-volatile VO2 phase transition for neuromorphic ultraviolet sensors[J]. Nat. Commun., 13: 1729(2022).

    [29] SCOTT J F, PAZ DE ARAUJO C A. Ferroelectric memories[J]. Science, 1400(1989).

    [30] SONG S J, KIM Y J, PARK M H et al. Alternative interpretations for decreasing voltage with increasing charge in ferroelectric capacitors[J]. Scientific Reports, 6: 20825(2016).

    [36] BOYN S, GROLLIER J, LECERF G et al. Learning through ferroelectric domain dynamics in solid-state synapses[J]. Nat. Commun., 8: 14736(2017).

    [37] JERRY M, CHEN P, ZHANG J et al[J]. IEEE International Electron Devices Meeting (IEDM), San Francisco(2017).

    [42] CHEN W, LIU J, MA L et al. Mechanical switching of ferroelectric domains beyond flexoelectricity[J]. Journal of the Mechanics and Physics of Solids, 111: 43(2018).

    [44] LONG X, TAN H, SÁNCHEZ F et al. Non-volatile optical switch of resistance in photoferroelectric tunnel junctions[J]. Nat. Commun., 12: 382(2021).

    [46] CUI B, FAN Z, LI W et al. Ferroelectric photosensor network: an advanced hardware solution to real-time machine vision[J]. Nat. Commun., 13: 1707(2022).

    [50] DU J, XIE D, ZHANG Q et al. A robust neuromorphic vision sensor with optical control of ferroelectric switching[J]. Nano Energy, 89: 106439(2021).

    Tools

    Get Citation

    Copy Citation Text

    Jianyu DU, Chen GE. Recent Progress in Optoelectronic Artificial Synapse Devices[J]. Journal of Inorganic Materials, 2023, 38(4): 378

    Download Citation

    EndNote(RIS)BibTexPlain Text
    Save article for my favorites
    Paper Information

    Category:

    Received: Nov. 22, 2022

    Accepted: --

    Published Online: Oct. 17, 2023

    The Author Email: Chen GE (gechen@iphy.ac.cn)

    DOI:10.15541/jim20220699

    Topics