Journal of Inorganic Materials, Volume. 38, Issue 4, 378(2023)

Recent Progress in Optoelectronic Artificial Synapse Devices

Jianyu DU1,2 and Chen GE2,3、*
Author Affiliations
  • 11. School of Science, Tianjin University of Technology, Tianjin 300382, China
  • 22. Institute of Physics, Chinese Academy of Sciences, Beijing 100039, China
  • 33. University of Chinese Academy of Sciences, Beijing 100049, China
  • show less
    Figures & Tables(5)
    Research based on the operation mechanism of ionization and dissociation of oxygen vacancy
    Research based on operation mechanism of trapping/detrapping of photogenerated carriers
    Research based on the operation mechanism of the light-induced phase change
    Research based on the interaction between light and ferroelectric materials
    Research based on the interaction between light and ferroelectric materials[50]
    Tools

    Get Citation

    Copy Citation Text

    Jianyu DU, Chen GE. Recent Progress in Optoelectronic Artificial Synapse Devices[J]. Journal of Inorganic Materials, 2023, 38(4): 378

    Download Citation

    EndNote(RIS)BibTexPlain Text
    Save article for my favorites
    Paper Information

    Category:

    Received: Nov. 22, 2022

    Accepted: --

    Published Online: Oct. 17, 2023

    The Author Email: Chen GE (gechen@iphy.ac.cn)

    DOI:10.15541/jim20220699

    Topics