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Chinese Journal of Lasers, Volume. 46, Issue 4, 0404001(2019)

Simulation of Scattering Characteristics of Micro- and Nano-Scale Defects in Sapphire Wafer

Jie Cheng1、*, Xiangning Wang1, Yongliang Xiao2, and Gengsheng Yu1、*
Author Affiliations
  • 1 School of Materials Science and Engineering, Xiangtan University, Xiangtan, Hunan 411105, China
  • 2 School of Physics and Optoelectronics, Xiangtan University, Xiangtan, Hunan 411105, China
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    AbstractGet PDF(in Chinese)
    Figures&Tables (8)
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    Figures & Tables(8)
    Coordinate system of spherical particle scattering

    Fig. 1. Coordinate system of spherical particle scattering

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    Simulation model of laser detection system for microsphere defect

    Fig. 2. Simulation model of laser detection system for microsphere defect

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    Scattering light intensity distributions of SiO2 microsphere defect with different sizes at different receiving positions

    Fig. 3. Scattering light intensity distributions of SiO2 microsphere defect with different sizes at different receiving positions

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    Spatial scattering light intensity distributions of Al microsphere defect with different sizes. (a) q=75;(b) q=50;(c) q=25;(d) q=10

    Fig. 4. Spatial scattering light intensity distributions of Al microsphere defect with different sizes. (a) q=75;(b) q=50;(c) q=25;(d) q=10

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    Spatial scattering light intensity distributions of SiO2 microsphere defect at different incident wavelengths

    Fig. 5. Spatial scattering light intensity distributions of SiO2 microsphere defect at different incident wavelengths

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    Spatial scattering light intensity distributions of SiO2 microsphere defect with different sizes when λ is 350 nm. (a) q=20, R=1.11 mm;(b) q=10, R=0.56 mm

    Fig. 6. Spatial scattering light intensity distributions of SiO2 microsphere defect with different sizes when λ is 350 nm. (a) q=20, R=1.11 mm;(b) q=10, R=0.56 mm

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    • Table 1. Ripple number of scattering light for defects with different sizes at different scattering angles θ

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      Table 1. Ripple number of scattering light for defects with different sizes at different scattering angles θ

      qθ=30°θ=45°θ=60°θ=90°θ=120°
      CrestTroughCrestTroughCrestTroughCrestTroughCrestTrough
      100121113141213101077
      504566665543
      253333232321

    • Table 2. Ripple number of scattered light for defects with different sizes when θ is 45°

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      Table 2. Ripple number of scattered light for defects with different sizes when θ is 45°

      qm=0.56m=0.83m=0.82+2.0im=1.4
      CrestTroughCrestTroughCrestTroughCrestTrough
      7510910911101111
      5066667678
      2533334334
      1011111221
      511011111
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    Jie Cheng, Xiangning Wang, Yongliang Xiao, Gengsheng Yu. Simulation of Scattering Characteristics of Micro- and Nano-Scale Defects in Sapphire Wafer[J]. Chinese Journal of Lasers, 2019, 46(4): 0404001

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    Paper Information

    Category: measurement and metrology

    Received: Aug. 28, 2018

    Accepted: Dec. 26, 2018

    Published Online: May. 9, 2019

    The Author Email:

    DOI:10.3788/CJL201946.0404001

    Topics

    laser devices and laser physics
    Lasers and Laser Optics
    Laser physics
    laser manufacturing
    Instrumentation, Measurement and Metrology