Acta Optica Sinica, Volume. 40, Issue 18, 1804001(2020)
Effect of Multiplication Layer Thickness on Device Properties of In0.53Ga0.47As/InP Avalanche Photodiode
Fig. 4. Internal electric field intensities under different multiplication layer thicknesses
Fig. 5. Breakdown voltage and punch-through voltage versus InP multiplication layer thickness
Fig. 6. Simulation results of APD device with thin multiplication layer. (a) I-V curves under different multiplication layer thicknesses; (b) breakdown voltage and punch-through voltage versus InP multiplication layer thickness
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Hang Wang, Zhengbing Yuan, Ming Tan, Yuqiang Gu, Yuanyuan Wu, Qingquan Xiao, Shulong Lu. Effect of Multiplication Layer Thickness on Device Properties of In0.53Ga0.47As/InP Avalanche Photodiode[J]. Acta Optica Sinica, 2020, 40(18): 1804001
Category: Detectors
Received: May. 25, 2020
Accepted: Jun. 11, 2020
Published Online: Aug. 31, 2020
The Author Email: Lu Shulong (sllu2008@sinano.ac.cn)