Effect of Multiplication Layer Thickness on Device Properties of In<sub>0.53</sub>Ga<sub>0.47</sub>As/InP Avalanche Photodiode

Hang Wang; Zhengbing Yuan; Ming Tan; Yuqiang Gu; Yuanyuan Wu; Qingquan Xiao; Shulong Lu

doi:10.3788/AOS202040.1804001

Acta Optica Sinica, Volume. 40, Issue 18, 1804001(2020)

Effect of Multiplication Layer Thickness on Device Properties of In_0.53Ga_0.47As/InP Avalanche Photodiode

Hang Wang^1,2, Zhengbing Yuan³, Ming Tan², Yuqiang Gu², Yuanyuan Wu², Qingquan Xiao³, and Shulong Lu^2、*

Author Affiliations

¹Institute of Nano-Tech and Nano-Bionics, University of Science and Technology of China, Hefei, Anhui 230026, China

²Key Laboratory of Nano-devices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou, Jiangsu 215123, China

³College of Big Data and Information Engineering, Guizhou University, Guiyang, Guizhou 550025, China

show less

Abstract Get PDF(in Chinese)

Cited By

Article index updated: Mar. 10, 2025

The article is cited by 5 article(s) CLP online library. (Some content might be in Chinese.)

Tools

Get Citation

Copy Citation Text

Hang Wang, Zhengbing Yuan, Ming Tan, Yuqiang Gu, Yuanyuan Wu, Qingquan Xiao, Shulong Lu. Effect of Multiplication Layer Thickness on Device Properties of In_0.53Ga_0.47As/InP Avalanche Photodiode[J]. Acta Optica Sinica, 2020, 40(18): 1804001

Download Citation

EndNote(RIS)BibTex Plain Text

Set citation alerts for article

Save article for my favorites

Paper Information

Category: Detectors

Received: May. 25, 2020

Accepted: Jun. 11, 2020

Published Online: Aug. 31, 2020

The Author Email: Lu Shulong (sllu2008@sinano.ac.cn)

DOI:10.3788/AOS202040.1804001

Topics

laser devices and laser physics

Lasers and Laser Optics

Laser physics

laser manufacturing

Instrumentation, Measurement and Metrology