On-chip warped three-dimensional InGaN/GaN quantum well diode with transceiver coexistence characters

Feifei Qin; Xueyao Lu; Xiaoxuan Wang; Chunxiang Guo; Jiaqi Wu; Xuefeng Fan; Mingming Jiang; Peng Wan; Junfeng Lu; Yongjin Wang; Gangyi Zhu

doi:10.1016/j.chip.2024.100115

Chip, Volume. 3, Issue 4, 100115(2024)

On-chip warped three-dimensional InGaN/GaN quantum well diode with transceiver coexistence characters

Feifei Qin¹, Xueyao Lu¹, Xiaoxuan Wang^2、*, Chunxiang Guo³, Jiaqi Wu¹, Xuefeng Fan¹, Mingming Jiang⁴, Peng Wan⁴, Junfeng Lu⁴, Yongjin Wang^1、**, and Gangyi Zhu^1、***

Author Affiliations

¹GaN Optoelectronic Integration International Cooperation Joint Laboratory of Jiangsu Province, Nanjing University of Posts and Telecommunications, Nanjing 210003,

²State Key Laboratory of Digital Medical Engineering, School of Biological Science and Medical Engineering, Southeast University, Nanjing 210096,

³Jiangsu Leuven Instruments Co., Ltd., Pizhou 221300,

⁴College of Physics, MIIT Key Laboratory of Aerospace Information Materials and Physics, Key Laboratory for Intelligent Nano Materials and Devices, Nanjing University of Aeronautics and Astronautics, Nanjing 211106,

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References(37)

[1] [1] M. Feng, et al.. On-chip integration of GaN-based laser, modulator, and photodetector grown on Si. 10.1109/JSTQE.2018.2815906

[2] [2] S. Yuvaraja, V. Khandelwal, X. Tang, X. Li. Wide bandgap semiconductorbased integrated circuits. 10.1016/j.chip.2023.100072

[3] [3] M. Lard, H. Linke, C.N. Prinz. Biosensing using arrays of vertical semiconductor nanowires: mechanosensing and biomarker detection. 10.1088/1361-6528/ab0326

[4] [4] F. Alreshidi, et al.. Enhanced efficiency InGaN/GaN multiple quantum well structures via strain engineering and ultrathin subwells formed by v-pit sidewalls. 10.1021/acsaom.3c00406

[5] [5] L. Zhu, Z. He, J. Zhan, J. Chen, K.H. Li. PDMS-assisted GaN optical hardness sensors. 10.1364/OL.503361

[6] [6] X. Jing, et al.. Coexistence of multiuser entanglement distribution and classical light in optical fiber network with a semiconductor chip. 10.1016/j.chip.2024.100083

[7] [7] Y. Luo, G. Lu, Q. Wang, Z. Chu, K.H. Li. Miniature viscometer incorporating GaN optical devices with an ultrawide measurement range. 10.37188/lam.2023.002

[8] [8] K. Xu, Y. Chen, T.A. Okhai, L.W. Snyman. Micro optical sensors based on avalanching silicon light-emitting devices monolithically integrated on chips. 10.1364/OME.9.003985

[9] [9] K.H. Li, W.Y. Fu, H.W. Choi. Chip-scale GaN integration. 10.1016/j.pquantelec.2020.100247

[10] [10] Z. Ye, et al.. Chip-integrated optical fiber magnetic field sensing system. 10.1364/OL.506448

[11] [11] X. Wang, et al.. A universal optoelectronic imaging platform with wafer-scaleintegration of two-dimensional semiconductors. 10.1016/j.chip.2024.100107

[12] [12] T. Deng, et al.. Three-dimensional graphene field-effect transistors as high-performance photodetectors. 10.1021/acs.nanolett.8b04099

[13] [13] Q. Pan, et al.. A star-like photodetector for angle-based light sensing in 3D space. 10.1007/s12274-024-6676-4

[14] [14] T. Liu, et al.. Piezo-phototronic effect in InGaN/GaN semi-floating micro-disk LED arrays. 10.1016/j.nanoen.2019.104218

[15] [15] S. Zhang, et al.. Realization of directional single-mode lasing by a GaN-based warped microring. 10.1364/PRJ.413796

[16] [16] C. Durand, et al.. Thin-wall GaN/InAlN multiple quantum well tubes. 10.1021/acs.nanolett.6b04852

[17] [17] X.-F. Jiang, et al.. Highly unidirectional emission and ultralow-threshold lasing from on-chip ultrahigh-Q microcavities. 10.1002/adma.201201229

[18] [18] X. Zhou, et al.. Rolling up MoSe2 nanomembranes as a sensitive tubular photodetector. 10.1002/smll.201902528

[19] [19] Z. Ma, et al.. Self-rolling of monolayer graphene for ultrasensitive molecular sensing. 10.1021/acsami.1c12592

[20] [20] R. Sharma, A. Charan Kumari, M. Aggarwal, S. Ahuja. Directional beam based LED deployment for a short range indoor LED light communication system. 10.1515/joc-2018-0214

[21] [21] M.L. Tran, S. Kim. Orientation-induced link-blocked receiver for MIMO visible light communication. 10.1364/OE.391594

[22] [22] S. Ma, et al.. Joint beamforming and PD orientation design for mobile visible light communications. 10.1109/TWC.2022.3231423

[23] [23] A.S. Fletcher, S.A. Hamilton, J.D. Moores. Undersea laser communication with narrow beams. 10.1109/MCOM.2015.7321971

[24] [24] F. Qin, et al.. Si-based GaN light-emitting diodes with MoS2 nanosheet-decorated fabry-perot waveguide structure. 10.1021/acsanm.3c05500

[25] [25] X. Gao, et al.. III-Nitride MQW-based optoelectronic sensors for multifunctional environmental monitoring. 10.1016/j.chip.2024.100113

[26] [26] P.A. Gabrys, et al.. Lattice mismatch in crystalline nanoparticle thin films. 10.1021/acs.nanolett.7b04737

[27] [27] W.Z. Tawfik, G.Y. Hyun, S.-W. Ryu, J.S. Ha, J.K. Lee. Piezoelectric field in highly stressed GaN-based LED on Si (111) substrate. 10.1016/j.optmat.2016.03.013

[28] [28] Z.-Z. Zhang, et al.. Influence of the lattice parameter of the AlN buffer layer on the stress state of GaN film grown on (111) Si. 10.1088/1674-1056/ac6b2b

[29] [29] Y.C. Lin, Y.S. Liu, C.L. Chang, C.Y. Liu. Warpage and stress relaxation of the transferred GaN LED epi-layer on electroplated Cu substrates. 10.1007/s13391-013-0029-x

[30] [30] H.W. Choi, et al.. Lasing in GaN microdisks pivoted on Si. 10.1063/1.2392673

[31] [31] S. Tripathy, S.J. Chua, P. Chen, Z.L. Miao. Micro-raman investigation of strain in GaN and AlxGa1− xN/GaN heterostructures grown on Si (111). 10.1063/1.1502921

[32] [32] L.S. Wang, K.Y. Zang, S. Tripathy, S.J. Chua. Effects of periodic delta-doping on the properties of GaN:Si films grown on Si (111) substrates. 10.1063/1.1832758

[33] [33] W. Miyazaki, H. Tanaka, N. Mori. Tight-binding analysis of the effect of strain on the band structure of GaN. 10.35848/1347-4065/acb7fe

[34] [34] M. Benaissa, W. Sigle, H. Zaari, M. Tadout, P.A. van Aken. Strain and size combined effects on the GaN band structure: VEELS and DFT study. 10.1039/C6CP08642J

[35] [35] J. Wang, et al.. Thermal characterization of electrically injected GaN-based microdisk lasers on Si. 10.35848/1882-0786/ab95f0

[36] [36] T. Takeuchi, et al.. Optical properties of strained AlGaN and GaInN on GaN. 10.1143/JJAP.36.L177

[37] [37] Y.T. Lin, et al.. Optimized performances in InGaN/GaN quantum-well membrane based vertical optoelectronics by the Piezo-phototronic effect. 10.1016/j.nanoen.2021.106454

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Feifei Qin, Xueyao Lu, Xiaoxuan Wang, Chunxiang Guo, Jiaqi Wu, Xuefeng Fan, Mingming Jiang, Peng Wan, Junfeng Lu, Yongjin Wang, Gangyi Zhu. On-chip warped three-dimensional InGaN/GaN quantum well diode with transceiver coexistence characters[J]. Chip, 2024, 3(4): 100115

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Paper Information

Category: Research Articles

Received: Aug. 9, 2024

Accepted: Oct. 28, 2024

Published Online: Jan. 23, 2025

The Author Email: Xiaoxuan Wang (wxxseu@seu.edu.cn), Yongjin Wang (wangyj@njupt.edu.cn), Gangyi Zhu (zhugangyi@njupt.edu.cn)

DOI:10.1016/j.chip.2024.100115

Topics

laser devices and laser physics

Lasers and Laser Optics

Laser physics

laser manufacturing

Instrumentation, Measurement and Metrology