On-chip warped three-dimensional InGaN/GaN quantum well diode with transceiver coexistence characters

Feifei Qin; Xueyao Lu; Xiaoxuan Wang; Chunxiang Guo; Jiaqi Wu; Xuefeng Fan; Mingming Jiang; Peng Wan; Junfeng Lu; Yongjin Wang; Gangyi Zhu

doi:10.1016/j.chip.2024.100115

Chip, Volume. 3, Issue 4, 100115(2024)

On-chip warped three-dimensional InGaN/GaN quantum well diode with transceiver coexistence characters

Feifei Qin¹, Xueyao Lu¹, Xiaoxuan Wang^2、*, Chunxiang Guo³, Jiaqi Wu¹, Xuefeng Fan¹, Mingming Jiang⁴, Peng Wan⁴, Junfeng Lu⁴, Yongjin Wang^1、**, and Gangyi Zhu^1、***

Author Affiliations

¹GaN Optoelectronic Integration International Cooperation Joint Laboratory of Jiangsu Province, Nanjing University of Posts and Telecommunications, Nanjing 210003,

²State Key Laboratory of Digital Medical Engineering, School of Biological Science and Medical Engineering, Southeast University, Nanjing 210096,

³Jiangsu Leuven Instruments Co., Ltd., Pizhou 221300,

⁴College of Physics, MIIT Key Laboratory of Aerospace Information Materials and Physics, Key Laboratory for Intelligent Nano Materials and Devices, Nanjing University of Aeronautics and Astronautics, Nanjing 211106,

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Feifei Qin, Xueyao Lu, Xiaoxuan Wang, Chunxiang Guo, Jiaqi Wu, Xuefeng Fan, Mingming Jiang, Peng Wan, Junfeng Lu, Yongjin Wang, Gangyi Zhu. On-chip warped three-dimensional InGaN/GaN quantum well diode with transceiver coexistence characters[J]. Chip, 2024, 3(4): 100115

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Paper Information

Category: Research Articles

Received: Aug. 9, 2024

Accepted: Oct. 28, 2024

Published Online: Jan. 23, 2025

The Author Email: Xiaoxuan Wang (wxxseu@seu.edu.cn), Yongjin Wang (wangyj@njupt.edu.cn), Gangyi Zhu (zhugangyi@njupt.edu.cn)

DOI:10.1016/j.chip.2024.100115

Topics

laser devices and laser physics

Lasers and Laser Optics

Laser physics

laser manufacturing

Instrumentation, Measurement and Metrology