Journal of Semiconductors, Volume. 46, Issue 3, 032701(2025)
Hard X-ray resonant reflectivity studies of ultrathin WS2 layers grown by pulsed laser deposition
Fig. 1. (Color online) (a) AFM image of ultrathin PLD grown WS2 5 ML/Al2O3 film. AFM image size 800 nm × 800 nm × 1 nm. The surface roughness (RMS) is estimated as 0.2 nm. Height profile drawn along the horizontal red line is shown below the AFM image. (b) X-ray absorption (fluorescence yield) and X-ray reflectance (at 2° of incidence) spectra measured across W L3 absorption edge in Ag/WS2/Al2O3 multilayer.
Fig. 2. (Color online) X-ray reflectivity curves measured (black) and modeled (red) at non-resonant photon energy of E = 8051 eV (λ = 1.54 Å) for WS2/Al2O3 epitaxial films with as-designed thickness of 2 (a), (b) and 5 (c), (d) monolayers. The corresponding SLD profiles are shown in panels (b), (d) and are interpreted as transition layer, WS2 main layer, and W oxide top layer.
Fig. 3. (Color online) Resonant reflectance in Ag/WS2/Al2O3 multilayer. Experimental (a) and modeled (b) maps in the energy range corresponding to the W L3 absorption edge. Vertical cuts (reflectance curves) of experimental and modeled maps plotted for a few discrete energy values in the vicinity of W L3 edge (c). The curves are stacked along the y-axis for a clearer visualization.
Fig. 4. (Color online) The real and imaginary parts of SLD across the W L3 edge obtained by fitting for the Ag/WS2/Al2O3 heterostructure plotted in the form of a depth-energy map (a), as a function of depth at constant photon energy of 10 203 eV (b) and for each layer material (c).
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Sergey M. Suturin, Polina A. Dvortsova, Alexander M. Korovin, Vladimir V. Fedorov, Evgeniya Yu. Lobanova, Nikolai S. Sokolov. Hard X-ray resonant reflectivity studies of ultrathin WS2 layers grown by pulsed laser deposition[J]. Journal of Semiconductors, 2025, 46(3): 032701
Category: Research Articles
Received: Aug. 26, 2024
Accepted: --
Published Online: Apr. 27, 2025
The Author Email: Sergey M. Suturin (SMSuturin)