[1] ZHANG Meng-jiao, CAI Yi, JIANG Feng et al. Silicon-based ultraviolet photodetection: progress and prospects[J]. Chinese Optics, 12, 19-37(2019).

[2] Myers Richard A., Farrell Richard, Riccardi Suzannah L. et al. UV-enhanced silicon avalanche photodiodes: Optical Components and Materials X 2013[C], 86211(2013).

[3] WANG Xu-Dong. Optimization of the enhancement of the Si-based APD for near-ultraviolet detection through structural design[D](2015).

[4] CHEN Wei-shuai, WANG Hao-bing, TAO Jin et al. A study on the epitaxial structure and characteristics of high-efficiency blue silicon photodetectors[J]. Chinese Optics, 15, 568-591(2022).

[5] Razeghi Manijeh, Dehzangi Arash, Li Jiakai. Multi-band SWIR-MWIR-LWIR Type-II superlattice based infrared photodetector[J]. Results in Optics, 2, 100054(2021).

[6] Liu Pei-xuan. Design of digital control circuit for multispectral pixel level fusion detector[D](2020).

[7] Vallone M, Goano M, Tibaldi A et al. Challenges in multiphysics modeling of dual-band HgCdTe infrared detectors[J]. Appl. Opt., 59, 5656-5663(2020).

[8] Hu Wei-da, Ye Zhen-hua, Liao Lei et al. 128×128 long-wavelength/mid-wavelength two-color HgCdTe infrared focal plane array detector with ultralow spectral cross talk[J]. Opt. Lett., 39, 5184-5187(2014).

[9] Lee K., Seo S., Huang S. et al. Design of a smart pixel multispectral imaging array using 3D stacked thin film detectors on Si CMOS circuits[C], I57-I58(2000).

[10] Lecomte R., Pepin C., Rouleau D. et al. Radiation detection measurements with a new “Buried Junction” silicon avalanche photodiode[J]. Nuclear Instruments and Methods in Physics Research A, 423, 92-102(1999).

[11] HUO L-ZH, TAN H-SH, HE R et al. Research of blue-violet enhanced silicon photomultiplier[J]. Laser & Optoelectronics Progress, 52, 110401(2015).

[12] LU H-H. Simulation study on silicon-based blue-light enhanced APD detector for visible light communication[D](2019).

[13] CHEN F. The enhancement of the APD for Blue-Ray detection in VLC[D](2018).

[14] WANG H-B. Research on enhancement in blue-light properties of silicon based avalanche photodiode[D](2020).

[15] Ghazi A, Zimmermann H, Seegebrecht P. CMOS photodiode with enhanced responsivity for the UV/blue spectral range[J]. Electron Devices IEEE Transactions on, 49, 1124-1128(2002).

[16] Chen Chang-ping, Wang Han, Jiang Zhen-yu et al. Design, fabrication, and measurement of two silicon-based ultraviolet and blue-extended photodiodes[J]. Photonic Sensors, 4, 373(2014).

[17] WANG Yi-Tong. Research on Silicon UV Avalanche Photodetectors[D](2021).

[18] Technologies Excelitas. Short-wavelength enhanced Si-APD C30739ECERH. https://www.excelitas.com/product/ c30739ecerh-si-apd-ceramic-carrier

[19] Green M. A.. Self-consistent optical parameters of intrinsic silicon at 300 K including temperature coefficients[J]. Solar Energy Materials and Solar Cells, 92, 1305-1310(2008).

[20] HAMDEN E T, GREEN F, HOENK M E et al. Ultraviolet antireflection coatings for use in silicon detector design[J]. Applied Optics, 50, 4180-4188(2011).

[21] Bablu Kumar Ghosh, Kenneth Teo Tze Kin, Saiful Sapri Mohd Zainal. Different materials coating effect on responsivity of Si UV photo detector, 2013[C], 446-449(2013).

[22] HAMDEN E T, JEWELL A D, SHAPIROCA et al. Charge-coupled devices detectors with high quantum efficiency at UV wavelengths[J]. Journal of Astronomical Telescopes Instruments ＆ Systems, 2, 036003(2016).

[23] ZHU Xiao-xiu, GE Y, LI J-J et al. Research progress of quantum dot enhanced silicon-based photodetectors[J]. Chinese Optics, 13, 62-74(2020).

[24] Wang Zan, Gu Yun-jiao, Li Xiao-man et al. Recent Progress of Quantum Dot Infrared Photodetectors[J]. Adv. Optical Mater., 11, 2300970(2023).

[25] Wang Jun-fan, Chen Jun. Photoresponsivity-Enhanced PbS Quantum Dots/Graphene/Silicon Near-Infrared Photodetectors[J]. IEEE Transactions on Nanotechnology, 22, 525-530(2023).

[26] Li Wei. Progress in Black Silicon Infrared Detectors[J]. Laser ＆Optoelectronics Progress, 070004(2016).

[27] Yamamoto K., Sakamoto A., Nagano T., Fukumitsu K.. NIR sensitivity enhancement by laser treatment for Si detectors[J]. Original Research Article Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 624, 520-523(2010).

[28] Hu Shao-xu, Han Pei-de, Wang Shu-ai et al. Improved photoresponse characteristics in Se-doped Si photodiodes fabricated using picosecond pulsed laser mixing[J]. Semiconductor Science and Technology, 27, 102002(2012).

[29] MAILOA J P, AKEY A J, SIMMONS C B et al. Room-temperature sub-band gap optoelectronic response of hyperdoped silicon[J]. Nature communications, 5, 3011(2014).

[30] GARCÍA-HEMME E, GARCÍA-HERNANSANZ R, OLEA J et al. Room-temperature operation of a titanium supersaturated silicon-based infrared photodetector[J]. Applied Physics Letters, 104, 211105(2014).

[31] Wang Jian-bo. Study of preparation and related device of black silicon[D](2015).

[32] Ma Shi-jun, Liu Shuang, Xu Qin-wei et al. A theoretical study on the optical properties of black silicon[J]. AIP Advances, 8, 035010(2018).

[33] Zhao Ji-Hong, Li Xian-Bin, Chen Qi-Dai et al. Ultrafast laser-induced black Si, from micro-nanostructuring, infrared absorption mechanism, to high performance detecting devices[J]. Materials Today Nano, 11, 100078(2020).

[34] Zhao Xiao-na, Zhao Bing, Lin Kun et al. Direct fabrication of black Si with enhanced infrared transmittance using femtosecond laser irradiation[J]. Optics and Laser Technology, 168, 109881(2024).

[35] Geis M W, Spector S J, Grein M E et al. CMOS-compatible all-Si high-speed waveguide photodiodes with high responsivity in near-infrared communication band[J]. Photonics Technology Letters, 19, 152-154(2007).

[36] Duan N, Liow T Y, Lim A E et al. High speed waveguide-integrated Ge/Si avalanche photodetector[C], OM3K, 132-133(2013).

[37] Souhan B, Grote R R, Chen C P et al. Si+-implanted Si-wire waveguide photodetectors for the mid-infrared[J]. Optics express, 22, 27415-27424(2014).

[38] Thomson D. J., Shen L., Ackert J. J. et al. Optical detection and modulation at 2~2.5μm in silicon[J]. Opt Express, 22, 10825-10830(2014).

[39] Ackert Jason J., Thomson David J., Li Shen et al. High speed detection at two micrometers with monolithic silicon photodiodes[J]. Nat Photonics, 9, 393-397(2015).

[40] Zhou Hong-yi. The study of the silicon photodetector[D](2015).

[41] Mao Xue. Silicon Waveguide Photodetector with Responsivity in Near-Infrared Band Based on Deep Level Absorption[D](2012).

[42] Logan D. F., Jessop P. E., Knights A. P.. Modeling Defect Enhanced Detection at 1 550 nm in Integrated Silicon Waveguide Photodetectors[J]. Journal of Lightwave Technology, 27, 930-937(2009).

[43] Xing Hai-long. Research on Infrared Enhanced Silicon-based Single Photon Avalanche Diode[D](2020).

[44] Qarony W, Mayet A S, Devine E P et al. Achieving higher photoabsorption than group III-V semiconductors in ultrafast thin silicon photodetectors with integrated photon-trapping surface structures[J]. Advanced Photonics Nexus, 2, 056001(2023).

[45] Nemecek A., Oberhauser K., Zach G. et al. Fast and efficient integrated silicon PIN-finger photodetector from ultraviolet up to near infrared,2005[C]. Antwerp, 108-110(2005).

[46] Chen Ze-feng, Cheng Zhen-zhou, Wang Jia-qi et al. High Responsivity, Broadband, and Fast Graphene/Silicon Photodetector in Photoconductor Mode[J]. Advanced Optical Materials, 3, 1207-1214(2015).

[47] Guan Yu-feng. Research on Silicon Based Wide Spectrum Photodetectors[D](2023).

[48] Grubišić D., Shah A. New silicon reach-through avalanche photodiodes with enhanced sensitivity in the DUV/UV wavelength range[C], 48-54(2013).

[49] Hoenk Michael E., Jewell April D., Kyne Gillian et al. 2D-doped silicon detectors for UV/optical/NIR and x-ray astronomy, 2022[C](12191).

[50] Nikzad Shouleh, Jewell April D., Hoenk Michael E. et al. High-efficiency UV/optical/NIR detectors for large aperture telescopes and UV explorer missions: development of and field observations with delta-doped arrays[J]. J. Astron. Telesc. Instrum. Syst., 3, 036002(2017).