Journal of Infrared and Millimeter Waves, Volume. 43, Issue 4, 464(2024)
Research on silicon avalanche photodetector with wideband response
Fig. 1. Curve of silicon absorption coefficient and surface reflectance with wavelength
Fig. 3. Ultraviolet enhanced Si APD, (a) electric field distribution; (b) IV curve and multiplication curve
Fig. 4. Curve of the refractive index dependence on wavelength of silicon
Fig. 5. Photocurrent spectra of Si APD under different conditions in shortwave antireflection films
Fig. 7. Broadband Si APD, (a) electric field; (b) impurity concentration profile
Fig. 8. IV and multiplication curves of Si APD simulated by the above structure under 905 nm illumination
Fig. 9. The Spectrum of Si APD,(a) without antireflection coating; (b) with antireflection coating
Fig. 10. Broadband Si APD photocurrent spectrum under different voltages
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Hong-Ling PENG, Jia-Qi WEI, Chun-Xu SONG, Tian-Cai WANG, Peng CAO, Jian CHEN, Jie DENG, Qian-Dong ZHUANG, Wan-Hua ZHENG. Research on silicon avalanche photodetector with wideband response[J]. Journal of Infrared and Millimeter Waves, 2024, 43(4): 464
Category: Research Articles
Received: Oct. 23, 2023
Accepted: --
Published Online: Aug. 27, 2024
The Author Email: Wan-Hua ZHENG (whzheng@semi.ac.cn)