Researching | Band alignment engineering of bilayer WS2/Ga2O3 heterostructures with interface-dependent photoluminescence

Journal of Infrared and Millimeter Waves, Volume. 42, Issue 2, 162(2023)

Band alignment engineering of bilayer WS₂/Ga₂O₃heterostructures with interface-dependent photoluminescence

Wan-Li YANG^1,4, Tian-Tian HUANG¹, Le-Peng ZHANG³, Pei-Ran XU¹, Cong JIANG¹, Tian-Xin LI¹, Zhi-Min CHEN³, Xin CHEN^1,2,4、*, and Ning DAI^1,2,4、**

Author Affiliations

¹State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China

²Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, Hangzhou 310024, China

³College of Materials Science and Engineering, Zhengzhou University, Zhengzhou 450052, China

⁴University of Chinese Academy of Sciences, Beijing 100049, China

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References(48)

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Wan-Li YANG, Tian-Tian HUANG, Le-Peng ZHANG, Pei-Ran XU, Cong JIANG, Tian-Xin LI, Zhi-Min CHEN, Xin CHEN, Ning DAI. Band alignment engineering of bilayer WS₂/Ga₂O₃heterostructures with interface-dependent photoluminescence[J]. Journal of Infrared and Millimeter Waves, 2023, 42(2): 162

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Paper Information

Category: Research Articles

Received: Sep. 14, 2022

Accepted: --

Published Online: Jul. 19, 2023

The Author Email: Xin CHEN (xinchen@mail.sitp.ac.cn), Ning DAI (ndai@mail.sitp.ac.cn)

DOI:10.11972/j.issn.1001-9014.2023.02.004

Topics

laser devices and laser physics

Lasers and Laser Optics

laser manufacturing

Instrumentation, Measurement and Metrology