Fig. 1. （a）Structural model schematic illustration of bilayer-WS₂/Ga₂O₃ heterostructure，（b）PL intensity map（at a wavelength of 640 nm）of layered WS₂ on Ga₂O₃ thin film，（c）PL spectra of the 1 L-WS₂ and 2 L-WS₂ domains in the heterostructure shown in（b）

Fig. 2. （a）Optical microscopy image of bilayer WS₂/Ga₂O₃ heterostructure，（b）corresponding Raman A1g mode intensity map of bilayer-WS₂ on Ga₂O₃ thin film in（a），the blue region is the 1 L region marked in（a）while the 2 L region is shown as the red，（c）Raman spectra of 1L-WS₂ and 2L-WS₂ in the heterostructure

Fig. 3. （a）Optical image of trilayer-WS₂/Ga₂O₃ heterostructure，（b）PL intensity map of WS₂ on Ga₂O₃ thin film，（c）Raman A1g mode intensity map of WS₂ on Ga₂O₃ thin film，（d）PL and（e）Raman spectra of 1 L-WS₂，2 L-WS₂ and 3 L-WS₂ in the heterostructure shown in（a）

Fig. 4. （a）Optical image of monolayer-WS₂/Ga₂O₃ heterostructure，（b）PL intensity map of WS₂ on Ga₂O₃ thin film，（c）Raman A1g mode intensity map of WS₂ on Ga₂O₃ thin film，（d）PL spectrum and（e）Raman spectrum of WS₂ in monolayer WS₂/Ga₂O₃ heterostructure

Fig. 5. （a）Optical image of trilayer-WS₂ on the SiO₂/Si substrate，（b）PL intensity map of WS₂ on the SiO₂/Si substrate，（c）Raman A1g mode intensity map of WS₂ on the SiO₂/Si substrate，（d）PL and（e）Raman spectra of 1L-WS₂，2L-WS₂ and 3L-WS₂ shown in（a）

Fig. 6. （a）Optical image of transferred bilayer-WS₂/Ga₂O₃ heterostructure，（b）PL intensity map of WS₂ transferred on Ga₂O₃ thin film，（c）Raman A1g mode intensity map of WS₂ transferred_{on Ga2O3 thin film，（d）PL and（e）Raman spectra of 1L-WS2 and 2L-WS2 in the heterostructure shown in（a）}

Fig. 7. （a）Surface potential（KPFM）profile of WS₂/Ga₂O₃ heterostructure，inset image is schematic diagram of WS₂/Ga₂O₃ heterostructure，（b）schematic of the energy band structure of WS₂/Ga₂O₃ heterostructure