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Chinese Journal of Liquid Crystals and Displays, Volume. 35, Issue 10, 1026(2020)

Influence of gate profile on TFT manufacturing process

LIU Dan1,2, LIU Yi1,3, HUANG Zhong-hao1, GAO Kun-kun1, WU Xu1, TIAN Mao-kun1, WANG Kai1, ZHANG Chao1, WANG Rui1, MIN Tai-ye1, FENG Jia-hai1, and FANG Liang2
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  • 1[in Chinese]
  • 2[in Chinese]
  • 3[in Chinese]
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    [7] [7] OSONO S, UCHIYAMA Y, KITAZOE M, et al. Coverage properties of silicon nitride film prepared by the Cat-CVD method [J]. Thin Solid Films, 2003, 430(1/2): 165-169.

    [8] [8] HEYA A, MINAMIKAWA T, NIKI T, et al. Coverage properties of SiNx films prepared by catalytic chemical vapor deposition on trenched substrates below 80 ℃ [J]. Thin Solid Films, 2008, 516(10): 3000-3004.

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    LIU Dan, LIU Yi, HUANG Zhong-hao, GAO Kun-kun, WU Xu, TIAN Mao-kun, WANG Kai, ZHANG Chao, WANG Rui, MIN Tai-ye, FENG Jia-hai, FANG Liang. Influence of gate profile on TFT manufacturing process[J]. Chinese Journal of Liquid Crystals and Displays, 2020, 35(10): 1026

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    Received: Mar. 20, 2020

    Accepted: --

    Published Online: Jan. 22, 2021

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    DOI:10.37188/yjyxs20203510.1026

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