<trans-title xml:lang="en">Effect of Ga3+ Doping on Crystal Structure Evolution and Microwave Dielectric Properties of SrAl2Si2O8 Ceramic </trans-title>

Changzhi YIN; Mingfei CHENG; Weicheng LEI; Yiyang CAI; Xiaoqiang SONG; Ming FU; Wenzhong LÜ; Wen LEI

doi:10.15541/jim20240549

Journal of Inorganic Materials, Volume. 40, Issue 6, 704(2025)

Effect of Ga³⁺ Doping on Crystal Structure Evolution and Microwave Dielectric Properties of SrAl₂Si₂O₈ Ceramic

Changzhi YIN^1,2, Mingfei CHENG^1,2, Weicheng LEI^1,2, Yiyang CAI^1,2, Xiaoqiang SONG^1,2, Ming FU^1,2, Wenzhong LÜ^1,2, and Wen LEI^1,2、*

Author Affiliations

¹1. Key Lab of Functional Materials for Electronic Information (B) of MOE, School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, China

²2. Wenzhou Key Laboratory of Microwave Communication Materials and Devices, Wenzhou Advanced Manufacturing Institute of HUST, Wenzhou 325000, China

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Figures & Tables(7)

1. (a) XRD patterns of SrAl_2-_xGa_xSi₂O₈ (0.1≤x≤2.0) ceramics sintered at 1150 ℃ for 6 h and (b) enlarged patterns in 2θ=26.5°-28.0°

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2. CTE of SrAl_2-_xGa_xSi₂O₈ ceramics with (a) x=1.0 and (b) x=1.6

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3. (a-d) Rietveld refinement patterns of SrAl_2-_xGa_xSi₂O₈ceramics; (e) Variation trends of cell parameters, β, and cell volume as a function of x

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4. SEM morphologies of SrAl_2-_xGa_xSi₂O₈ ceramics after being polished and etched(a) x=0.1; (b) x=1.6; (c) x=1.8; (d) x=1.9

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$Densities and microwave dielectric properties of SrAl2-xGaxSi2O8 ceramics as a function of x(a) Density; (b) Permittivity; (c) Q×f and packing fraction; (d) τf$

5. Densities and microwave dielectric properties of SrAl_2-_xGa_xSi₂O₈ ceramics as a function of x(a) Density; (b) Permittivity; (c) Q×f and packing fraction; (d) τ_f

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6. (a) XRD patterns of 0.85SrAl_0.4Ga_1.6Si₂O₈+0.15CaTiO₃ ceramic sintered at 1280 ℃; (b) SrAl_0.4Ga_1.6Si₂O₈+4% (in mass) LiF cofired with 20% (in mass) Ag at 940 ℃

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Table 1.
Microwave dielectric properties of (1-y)SrAl_0.4Ga_1.6Si₂O₈ + yCaTiO₃ ceramics sintered at their optimum temperature
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Table 1.
Microwave dielectric properties of (1-y)SrAl_0.4Ga_1.6Si₂O₈ + yCaTiO₃ ceramics sintered at their optimum temperature
y ε_r Q×f/GHz τ_f/(×10^-6, ℃^-1)
0.03 6.1 50300 -31.6
0.06 6.3 49800 -24.4
0.09 6.5 49400 -12.8
0.12 6.7 48900 -5.7
0.15 7.0 48400 +3.7

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Changzhi YIN, Mingfei CHENG, Weicheng LEI, Yiyang CAI, Xiaoqiang SONG, Ming FU, Wenzhong LÜ, Wen LEI. Effect of Ga³⁺ Doping on Crystal Structure Evolution and Microwave Dielectric Properties of SrAl₂Si₂O₈ Ceramic [J]. Journal of Inorganic Materials, 2025, 40(6): 704

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Paper Information

Category:

Received: Dec. 31, 2024

Accepted: --

Published Online: Sep. 2, 2025

The Author Email: Wen LEI (wenlei@mail.hust.edu.cn)

DOI:10.15541/jim20240549

Topics

laser devices and laser physics

Lasers and Laser Optics

Laser physics

laser manufacturing

Instrumentation, Measurement and Metrology

Table 1. Microwave dielectric properties of (1-y)SrAl0.4Ga1.6Si2O8 + yCaTiO3 ceramics sintered at their optimum temperature

Table 1. Microwave dielectric properties of (1-y)SrAl0.4Ga1.6Si2O8 + yCaTiO3 ceramics sintered at their optimum temperature

Table 1.
Microwave dielectric properties of (1-y)SrAl_0.4Ga_1.6Si₂O₈ + yCaTiO₃ ceramics sintered at their optimum temperature

Table 1.
Microwave dielectric properties of (1-y)SrAl_0.4Ga_1.6Si₂O₈ + yCaTiO₃ ceramics sintered at their optimum temperature