Electron Irradiation Performance of GaInP/Ga(In)As/Ge Triple Junction Solar Cell Based on Bragg Reflector

Pingyuan Yan; Jielei Tu; Abuduwayiti Aierken; Weinan Zhang; Lei Li; Kai Hu; Qiqi Lei

doi:10.3788/AOS202040.1631001

Acta Optica Sinica, Volume. 40, Issue 16, 1631001(2020)

Electron Irradiation Performance of GaInP/Ga(In)As/Ge Triple Junction Solar Cell Based on Bragg Reflector

Pingyuan Yan¹, Jielei Tu^1、*, Abuduwayiti Aierken¹, Weinan Zhang¹, Lei Li¹, Kai Hu¹, and Qiqi Lei²

Author Affiliations

¹Solar Energy Research Institute, Yunnan Normal University, Kunming, Yunnan 650500, China

²Xinjiang Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Urumqi, Xinjiang 830011, China

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Figures & Tables(13)

Fig. 1. Reflectance of Al_xGa_1-_x As/Al_1-_xGa_x As for various values of Al component and pairs

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Fig. 2. Reflectance of GaAs/Al_xG ${a_{1}}_{-}_{x}$ As for various values of Al component and pairs

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Fig. 3. Structure of GaInP/Ga(In)As/Ge UMM3J solar cell

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Fig. 4. Simulated and measured reflectance of DBR structure in UMM3J solar cell

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Fig. 5. I-V curves of UMM3J solar cell at different irradiation fluences

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Fig. 6. Normalized electrical performance curves of UMM3J solar cell at different electron irradiation fluences

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Fig. 7. EQE curves of UMM3J solar cell at different irradiation fluences

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Fig. 8. Short-circuit current denstiy of sub-cells at different irradiation fluences. (a) Degradation curves; (b) normalized curves

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Fig. 9. Degradation of short-circuit current denstiy J_sc of each sub-cell at different irradiation fluences

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Fig. 10. Reflectance of UMM3J solar cell at different irradiation fluences. (a) Whole curves; (b) partial enlargement

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Table 1. Electrical parameters of UMM3J solar cell at different electron irradiation fluences

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Table 1. Electrical parameters of UMM3J solar cell at different electron irradiation fluences

Electronfluence /(e·cm^-2)	V_oc /V	I_sc /A	P_max /W	FF	E_ff	I_ph /mA	I₀ /A	n	R_s /Ω	R_sh /Ω
0	2.63	0.157	0.326	0.789	28.14	13.05	7.37×10^-8	1.74	17.75	20000
1×10¹⁵	2.43	0.142	0.272	0.788	24.08	11.71	6.86×10^-8	1.83	18.08	5675
2×10¹⁵	2.35	0.137	0.253	0.783	21.73	11.32	5.58×10^-7	1.85	18.29	3857
5×10¹⁵	2.3	0.13	0.227	0.76	19.57	10.51	1.02×10^-7	1.86	20.40	2625

Table 2. Degradation of main parameters of UMM3J solar cell
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Table 2. Degradation of main parameters of UMM3J solar cell
Parameter c_p φ₀_p / (e·cm^-2)
V_oc 0.0713 8.31×10¹³
I_sc 0.1193 1.87×10¹⁴
P_max 0.217 2.07×10¹⁴

Table 3. D_d of UMM3J solar cell at different electron irradiation fluences
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Table 3. D_d of UMM3J solar cell at different electron irradiation fluences
Electron fluence /(e·cm^-2) D_d /(MeV·g^-1)
1×10¹⁵ 3.17×10¹⁰
2×10¹⁵ 6.34×10¹⁰
5×10¹⁵ 15.86×10¹⁰

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Pingyuan Yan, Jielei Tu, Abuduwayiti Aierken, Weinan Zhang, Lei Li, Kai Hu, Qiqi Lei. Electron Irradiation Performance of GaInP/Ga(In)As/Ge Triple Junction Solar Cell Based on Bragg Reflector[J]. Acta Optica Sinica, 2020, 40(16): 1631001

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