Electron Irradiation Performance of GaInP/Ga(In)As/Ge Triple Junction Solar Cell Based on Bragg Reflector

Pingyuan Yan; Jielei Tu; Abuduwayiti Aierken; Weinan Zhang; Lei Li; Kai Hu; Qiqi Lei

doi:10.3788/AOS202040.1631001

Acta Optica Sinica, Volume. 40, Issue 16, 1631001(2020)

Electron Irradiation Performance of GaInP/Ga(In)As/Ge Triple Junction Solar Cell Based on Bragg Reflector

Pingyuan Yan¹, Jielei Tu^1、*, Abuduwayiti Aierken¹, Weinan Zhang¹, Lei Li¹, Kai Hu¹, and Qiqi Lei²

Author Affiliations

¹Solar Energy Research Institute, Yunnan Normal University, Kunming, Yunnan 650500, China

²Xinjiang Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Urumqi, Xinjiang 830011, China

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Pingyuan Yan, Jielei Tu, Abuduwayiti Aierken, Weinan Zhang, Lei Li, Kai Hu, Qiqi Lei. Electron Irradiation Performance of GaInP/Ga(In)As/Ge Triple Junction Solar Cell Based on Bragg Reflector[J]. Acta Optica Sinica, 2020, 40(16): 1631001

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Paper Information

Category: Thin Films

Received: Apr. 9, 2020

Accepted: May. 6, 2020

Published Online: Aug. 7, 2020

The Author Email: Tu Jielei (tjl@ynnu.edu.cn)

DOI:10.3788/AOS202040.1631001

Topics

laser devices and laser physics

Lasers and Laser Optics

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laser manufacturing

Instrumentation, Measurement and Metrology