Review of Semiconductor Distributed Feedback Lasers in the Optical Communication Band

Lu Dan; Yang Qiulu; Wang Hao; He Yiming; Qi Hefei; Wang Huan; Zhao Lingjuan; Wang Wei

doi:10.3788/CJL202047.0701001

Chinese Journal of Lasers, Volume. 47, Issue 7, 701001(2020)

Review of Semiconductor Distributed Feedback Lasers in the Optical Communication Band

Lu Dan^1,2,3, Yang Qiulu^1,2,3, Wang Hao^1,2,3, He Yiming^1,2,3, Qi Hefei^1,2,3, Wang Huan^1,2,3, Zhao Lingjuan^1,2,3, and Wang Wei^1,2,3

Author Affiliations

¹Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China

²Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China

³Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Beijing 100083, China

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Figures & Tables(12)

Fig. 1. Typical structure of a semiconductor DFB laser and gratings. (a) Structures of distributed feedback lasers; (b) uniform grating; (c) λ/4 phase-shifted grating

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Fig. 2. Surface grating structure. (a) Laterally-coupled grating; (b) slot grating

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Fig. 3. Optimization of high speed DMLs. (a) Influence of the number of quantum wells on differential gain^[23]; (b) uncooled operation comparison using InGaAsP and AlGaInAs quantum wells^[24]; (c) influence of wavelength offset on differential gain^[25]

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Fig. 4. DML with integrated passive structure. (a) Distributed reflector laser^[25]; (b) integrated passive waveguide^[39]

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Fig. 5. PPR and structures. (a) PPR principle^[25]; (b) passive feedback structure^[25]; (c) amplified feedback structure^[47]

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Fig. 6. SCH layer and cladding doping optimization. (a) Structure of a laser with GRIN-SCH layers and dilute waveguide^[50]; (b) influence of doping level on the injection efficiency at the SCH/p-cladding interface^[59]; (c) doping concentration-depth profiles of structures with low doped p-cladding InP (Type 1), graded doped p-cladding InP (Type 2), and delta-doped interfaces and moderate doped p-confining

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Fig. 7. Mode control. (a) Optical intensity distribution for low κL (upper) and high κL (lower) values^[67]; (b) relationship between κL and intensity distribution function F, a lower F indicates a more uniform intensity distribution ^[13]; (c) a double-trench ridge waveguide laser structure^[68]

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Fig. 8. Trend of DFB laser linewidth. (a) Output power^[76]; (b) cavity length^[76]; (c) wavelength detuning^[88]

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Table 1. Research progress on high-speed direct-modulated DFB with bandwidth exceeding 20 GHz

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Table 1. Research progress on high-speed direct-modulated DFB with bandwidth exceeding 20 GHz

Year	Researchinstitution	Key feature	λ /μm	Material/No.of MQWs	Bandwidth /GHz	Activeregionlength /μm	Reference
1995	Ortel	BH; λ-detuned:15 nm; thin SCHto suppress carrier transport;optimized metal contact RC	1.3	InGaAsP/10	20	250	[51]
1995	HHI	BH; λ-detuned:10 nm;asymmetrical SCH	1.5	AlGaInAs/10	21	215	[52]
2006	HHI	PFL; PPRbandwidth enhancement;asymmetrical waveguide	1.5	InGaAsP/-	30	250	[53]
2012	Institute ofSemiconductors,CAS(ISCAS)	Ridge waveguide; high linear	1.3	AlGaInAs/6	24	220	[54]
2012	Fujitsu	DBR-DR; BH	1.3	AlGaInAs/12	25.5	100	[40]
2013	NTT	DR; BCB to reduce RC	1.3	AlGaInAs/8	34	100	[41]
2015	ISCAS	AFL; PPR; complexcoupled grating	1.5	InGaAsP/5	27	220	[47]
2015	Hitachi	DR; Ridge-BH; ACPM grating;λ-detuned: 13 nm;wide temperature range	1.3	AlGaInAs/-	29.5	120	[39]
2016	Finisar	DR; BCB; wide temperature range	1.3	AlGaInAs/-	29	150	[55]
2017	Finisar	DBR-DR; PPR; BH; BCB;wide temperature range	1.3	AlGaInAs/-	55	50	[4]
2019	Oclaro	ACPM grating; optimized MQWand SCH to improve Γ;Zn-dopingto improve differential gain; ridgewaveguide; wide temperature range	1.3	AlGaInAs/-	34.2	150	[5]

Table 2. Research progress on DFB lasers with output power exceeding 100 mW

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Table 2. Research progress on DFB lasers with output power exceeding 100 mW

Year	Researchinstitution	λ /μm	Key feature	Material/No.of MQWs	P/mW	κL	Cavitylength /mm	Reference
1995	Siemens AG	1.3	Complex coupled grating	InGaAsP/-	115	1.6	0.4	[66]
1995	Ortel	1.5	BH; low κL;low RIN (-165 dB/Hz)	InGaAsP/4	108 (fiberoutput)	-	1	[72]
2000	SensorsUnlimited	1.5	Broadened waveguides;uniform grating;low RIN (-165 dB/Hz)	InGaAsP/3	162	1	1.5	[73]
2001	PrincetonLightwave	1.5	Double-trench ridge	InGaAsP/-	440	-	2	[69]
2002	PrincetonLightwave	1.3	Double-trench ridge	InGaAsP/-	500	1	2	[70]
2007	JDSU	1.3	Optimized κL;broadened waveguides;narrow linewidth(150 kHz);	InGaAsP/-	600	0.7~1	2	[7]
2010	Emcore	1.5	Uniform grating; BH;narrow linewidth (100 kHz);low RIN (-170 dB/Hz)	InGaAsP/-	180	-	1.25	[74]
2013	Thales AirSystems	1.5	Double-trench ridge	InGaAsP/6	180	0.8	1	[64]
2019	ISCAS	1.5	Double-trench ridge;dilute waveguide;modulation bandwidth8.5 GHz	AlGaInAs/4	160	1	1	[71]

Table 3. Research progress on narrow linewidth DFB laser

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Table 3. Research progress on narrow linewidth DFB laser

Year	Research institution	Key feature	Linewidth/kHz	Length/mm	Reference
1990	NEC	MQW; λ/4 phase shift grating;wavelength detuning	250	1.5	[85]
1991	Hitachi	MQW; CPM grating; wavelength detuning	170	1.2	[91]
1992	Alcatel AlsthomRecherche	Strained MQW; optimizedκL; uniform grating	70	1.45	[21]
1993	Hitachi	Strained MQW; CPM grating	3.6	1.2	[6]
1999	Stuttgart Univ	Strained MQW;complex coupled grating	250	0.37	[98]
2007	JDSU	Strained MQW; large mode areawaveguide and high power (600 mW)	150	2	[7]
2011	Tampere Universityof Technology	3rd-order sidewall grating (withoutphase shift); nanoimprint lithography	200	0.3	[92]
2011	Emcore	BH; holographic grating; high power(140 mW); low RIN (-167 dB/Hz)	25	1.25	[99]
2012	University ofGlasgow	λ/4 phase shift sidewall grating; wavelengthdetuning; high power (210 mW)	64	1.15	[93]

Table 4. Research progress on low-RIN DFB laser

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Table 4. Research progress on low-RIN DFB laser

Year	Researchinstitution	Key feature	P /mW	RIN /(dB/Hz)	Length /mm	Reference
1995	Ortel	Strained MQW; optimized κL	108	<-165 @60 mW	0.5	[72]
2010	3S Photonics	holographic grating; ridge waveguide	>130	<-165 (0.1--20 GHz)	1.5	[100]
2010	Emcore	BH; holographic grating;narrow linewidth (25 kHz)	180	-170(1--20 GHz)	1.2	[74]
2012	APICCorporation	BH; optimized κL	>200	<-165 (0.1--20 GHz)-170@8 GHz	1.8	[97]
2013	Thales AirSystems	Asymmetrical cladding; dilutewaveguide; narrow linewidth (300 kHz)	180	<-160 (0.08--40 GHz)-170 (0.08--2 GHz)	1.0	[64]
2018	Thales AleniaSpace	MBE; Asymmetrical cladding;double-trench waveguide;narrow linewidth (130 kHz)	300	<-162 (0.1--20 GHz)	1.5	[101]

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Lu Dan, Yang Qiulu, Wang Hao, He Yiming, Qi Hefei, Wang Huan, Zhao Lingjuan, Wang Wei. Review of Semiconductor Distributed Feedback Lasers in the Optical Communication Band[J]. Chinese Journal of Lasers, 2020, 47(7): 701001

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Paper Information

Special Issue:

Received: Feb. 24, 2020

Accepted: --

Published Online: Jul. 10, 2020

The Author Email:

DOI:10.3788/CJL202047.0701001

Topics

laser devices and laser physics

Lasers and Laser Optics

Laser physics

laser manufacturing

Instrumentation, Measurement and Metrology