Effect of Substrate Crystal Planes on the Properties of Homoepitaxial n-Ga<sub>2</sub>O<sub>3</sub> Thin Films Grown by MOCVD

HAN Yu; JIAO Teng; YU Han; SAI Qinglin; CHEN Duanyang; LI Zhen; LI Yihan; ZHANG Zhao; DONG Xin

doi:10.16553/j.cnki.issn1000-985x.2024.0310

Journal of Synthetic Crystals, Volume. 54, Issue 3, 438(2025)

Effect of Substrate Crystal Planes on the Properties of Homoepitaxial n-Ga₂O₃ Thin Films Grown by MOCVD

HAN Yu¹, JIAO Teng¹, YU Han¹, SAI Qinglin², CHEN Duanyang², LI Zhen¹, LI Yihan¹, ZHANG Zhao¹, and DONG Xin^1、*

¹State Key Laboratoy on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 130012, China

²Research Center of Laser Crystal, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, China

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HAN Yu, JIAO Teng, YU Han, SAI Qinglin, CHEN Duanyang, LI Zhen, LI Yihan, ZHANG Zhao, DONG Xin. Effect of Substrate Crystal Planes on the Properties of Homoepitaxial n-Ga₂O₃ Thin Films Grown by MOCVD[J]. Journal of Synthetic Crystals, 2025, 54(3): 438

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Paper Information

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Received: Dec. 10, 2024

Accepted: Apr. 23, 2025

Published Online: Apr. 23, 2025

The Author Email: DONG Xin (dongx@jlu.edu.cn)

DOI:10.16553/j.cnki.issn1000-985x.2024.0310

Topics

laser devices and laser physics

Lasers and Laser Optics

Laser physics

laser manufacturing

Instrumentation, Measurement and Metrology