The homoepitaxial growth of Si-doped n-type β-Ga₂O₃ thin films was achieved on Fe-doped (001), (010), and $（\bar{2}01）$β-Ga₂O₃ substrates using the metal-organic chemical vapor deposition (MOCVD) technique. The effects of substrate crystal planes on the crystal quality, growth rate, and electrical properties of the epitaxial films were systematically investigated. The results show that the homoepitaxial n-type β-Ga₂O₃ thin films exhibit the same crystallographic orientation as the substrates, with narrow full width at half maximum (FWHM) values in the rocking curves, indicating high crystal quality. The films demonstrate low surface roughness and exhibit step-flow growth characteristics. Significant differences in homoepitaxial growth rates were observed on substrates with different orientations, with the growth rate on the (001) substrate exceeding 1 μm/h. The n-type β-Ga₂O₃ thin films grown on the (010) substrate exhibit the highest carrier concentration and mobility, making them more promising for device fabrication. This study provides valuable data to support the development of Ga₂O₃-based devices.