Chinese Journal of Lasers, Volume. 52, Issue 18, 1803032(2025)
Packaging and Application of Semiconductor Laser Based on Single Crystal SiC Heat Sink (Invited)
Figures & Tables(8)
Fig. 1. Principle diagrams of electron beam evaporation and electroplating. (a) Electron beam evaporation; (b) electroplating
Fig. 2. Physical images of laser packages. (a) 640 nm semiconductor laser; (b) 915 nm semiconductor laser
Fig. 4. P-I characteristics under different temperatures. (a) LD in single-crystal SiC heat-sink package; (b) LD in AlN heat-sink package
Fig. 5. Wavelength-temperature curves and wavelength-current curves of 640 nm LDs in different heat sink packages. (a) Wavelength-temperature curve; (b) wavelength-current curve
Fig. 7. P-I-V curves of 915 nm LDs in different heat sink packages coated with copper
Fig. 8. Wavelength-temperature curves of 915 nm LDs in different heat-sink packages
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Sheng’an Hu, Cuishan Wang, Xueting Jing, Junhua Zhao, Xiaoye Sun, Xiuhui Yue, Kai Jiang, Wenjing Tang, Jian Su, Mingsheng Xu, Wei Xia, Xiangang Xu. Packaging and Application of Semiconductor Laser Based on Single Crystal SiC Heat Sink (Invited)[J]. Chinese Journal of Lasers, 2025, 52(18): 1803032
Paper Information
Category: Materials
Received: Jun. 16, 2025
Accepted: Jul. 21, 2025
Published Online: Sep. 13, 2025
The Author Email: Mingsheng Xu (xums@email.sdu.edu.cn), Wei Xia (sps_xiaw@ujn.edu.cn)
CSTR:32183.14.CJL250964
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