Journal of Inorganic Materials, Volume. 38, Issue 10, 1117(2023)
Figures & Tables(22)
![Schematic diagram of power module and metallized ceramic substrate[7]](/Images/icon/loading.gif){kind=icon}
1. Schematic diagram of power module and metallized ceramic substrate[7]
2. Appearance of (a) Si3N4 coppered substrate after 1000 thermal cycles of -40 to 250 ℃, (b) AlN coppered substrate after 7 cycles of -40 to 250 ℃, and (c) side view of the delaminated Cu plate indicated by white circle in (b) [9]
3. Microstructure factors affecting the thermal conductivity of Si3N4 ceramics
4. Effect of grain size on the thermal conductivity of β -Si3N4 with various grain-boundary film thicknesses[35]
5. Thermal conductivity and lattice oxygen content of β -Si3N4 changed by adjusting the ratio of Y2O3/SiO2[18]
6. Relationships between ionic radii of rare-earth oxide additives and (a) thermal conductivity, (b) thermal diffusivity and (c) lattice oxygen content of β -Si3N4[43]
8. Developments of high thermal conductivity Si3N4 ceramics with different sintering additives systems and sintering methods
9. Change of (a) average grain size, (b) bending strength, (c) fracture toughness, and (d) thermal conductivity of Si3N4 ceramics with radius of rare earth ion[79]
10. Elemental distributions of the polished surface of Si3N4 with Gd2O3-MgSiN2 additives after sintering at 1900 ℃ for 12 h[80]
11. Schematic diagram of the mechanism of sintering additive ZrH2 in the sintering of Si3N4 ceramics[76]
12. Effect of carbon addition on the microstructure of Si3N4 ceramics[67]
13. Kinetic analysis of β -Si3N4 grain growth in Si3N4 samples with Y2O3-MgO and YF3-MgF2 additives[88]
15. Schematic diagram of the four different embedding conditions[95]
16. Effect of different pre-sintering temperature on the microstructure of Si3N4 after two-step sintering((a) 1500 ℃, (b) 1525 ℃, (c) 1550 ℃ and (d) 1600 ℃), (e) relative density of Si3N4 samples after pre-sintering and two-step sintering, and (f) thermal conductivity and flexural strength of Si3N4 samples after two-step sintering[97]
17. Thermal conductivity, bending strength and fracture toughness of Si3N4 ceramics prepared by different sintering methods and additives
18. Effect of substrate thickness on the dielectric breakdown strength (DBS) of Si3N4 ceramics sintered for (a) 1, (b) 3, (c) 6, (d) 12, (e) 24, and (f) 48 h[117]
19. Schematic images of the connecting path for the interface between β -Si3N4 grain and grain boundary phases/ intergranular glassy films (IGFs) in the substrates which have (a) smaller and (b) larger ratio of grain size to substrate thickness[117]
20. Images of the SN-1 coppered substrate after different thermal cycles ((a) 10 cycles, (b) 100 cycles, (c) 200 cycles, and (d) 1000 cycles), (e) plots of residual to initial strength ratio vs. thermal cycle number of the coppered substrates, and (f) relationship between residual to initial strength ratio and fracture toughness of the Si3N4 coppered substrates after 10 cycles[118]
Table 1. Properties of Al2O3, AlN and Si3N4 ceramic substrate materials[8]
View tableView in ArticleTable 1. Properties of Al2O3, AlN and Si3N4 ceramic substrate materials[8]
Material Al2O3 AlN Si3N4 Density/(g·cm-3) 3.9 3.3 3.2 Elasticity modulus/GPa 370 310 320 Bending strength/MPa 300-400 220-310 600-750 Fracture toughness/(MPa·m1/2) 3.5-4.0 3.0-3.5 6.5-7.5 Thermal expansion coefficient/ (×10-6, K-1) 7-8 4.6 2.7-3.4 Thermal conductivity/ (W·m-1·K-1) 18-24 67-150 27-54 Dielectric strength/(kV·mm-1) 10-18 14-16 12-18 Resistivity/(Ω·m) >1012 >1012 >1012 Relative permittivity 9-10 6.0-8.5 7-9
Table 2. Mechanical and thermal properties of Si3N4 ceramic substrates and AlN ceramic substrates for thermal cycle testing[118]
View tableView in ArticleTable 2. Mechanical and thermal properties of Si3N4 ceramic substrates and AlN ceramic substrates for thermal cycle testing[118]
Ceramic substrate (Material code) Flexural strength/MPa Fracture toughness/(MPa·m1/2) Thermal conductivity/(W·m-1·K-1) Si3N4 (SN-1) 669±29 10.5±0.2 140 Si3N4 (SN-2) 909±303 5.2±0.2 21 Si3N4 (SN-3) 977±79 5.5±0.1 - Si3N4 (SN-4) 604±25 8.0±0.4 90 AlN 461±62 3.2±0.2 180
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Shi FU, Zengchao YANG, Jiangtao LI.
Paper Information
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Received: Jan. 20, 2023
Accepted: --
Published Online: Mar. 6, 2024
The Author Email: Zengchao YANG (yangzengchao@mail.ipc.ac.cn), Jiangtao LI (lijiangtao@mail.ipc.ac.cn)
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