The UV nanosecond marking system is used to experimentally study the direct marking of DM code on silicon wafer surface. The control variable method is used to study the influence of different pulse duty cycle, repetition frequency, and spot overlap ratios on the thermal damage, surface topography, and DM code reading effect of the marking materials. The results show that the pulse duty cycle and repetition frequency have obvious effects on the ring width and heat affected zone of the marking area, and the reading rate and reading time of DM code are affected by duty cycle, repetition frequency, and spot overlap rate at the same time. The single-pulse energy in the range of 10.7 μJ~20 μJ can mark uniform, delicate, stable, and high-readability dust-free marks that meet the SEMI standard.