[1] M. Rouviere, M. Halbwax, J.-L. Cercus. Integration of germanium waveguide photodetectors for optical intra-chip interconnects. Proc. SPIE, 5453, 142-149(2004).

[2] J. Zhang, M. A. Itzler, H. Zbinden. Advances in InGaAs/InP single-photon detector systems for quantum communication. Light Sci. Appl., 4, e286(2015).

[3] M. Wanitzek, M. Oehme, D. Schwarz. Ge-on-Si avalanche photodiodes for LIDAR applications. 43rd International Convention on Information, Communication and Electronic Technology, 8-12(2020).

[4] B. Wang, Z. Huang, W. V. Sorin. A low-voltage Si-Ge avalanche photodiode for high-speed and energy efficient silicon photonic links. J. Lightwave Technol., 38, 3156-3163(2020).

[5] W. Wang, L. Zhao, D. Lu. Preface to the special issue on semiconductor optoelectronic integrated circuits. J. Semicond., 42, 040101(2021).

[6] M. Rouviere, M. Halbwax, J. L. Cercus. Integration of germanium waveguide photodetectors for intrachip optical interconnects. Opt. Eng., 44, 075402(2005).

[7] Y. Xiang, H. Cao, C. Liu. High-performance waveguide Ge/Si avalanche photodiode with simplified fabrication processes. Asia Communications and Photonics Conference (ACP), T1D.4(2021).

[8] X. Liu, X. Li, Y. Li. Three-terminal germanium-on-silicon avalanche photodiode with extended p-charge layer for dark current reduction. Photon. Res., 10, 1956-1963(2022).

[9] Y. Xiang, H. Cao, C. Liu. High-speed waveguide Ge/Si avalanche photodiode with a gain-bandwidth product of 615  GHz. Optica, 9, 762-769(2022).

[10] T. Y. Liow, N. Duan, A. E. J. Lim. Waveguide Ge/Si avalanche photodetector with a unique low-height-profile device structure. Optical Fiber Communication Conference (OFC), M2G.6(2014).

[11] N. J. D. Martinez, C. T. Derose, R. W. Brock. High performance waveguide-coupled Ge-on-Si linear mode avalanche photodiodes. Opt. Express, 24, 19072-19081(2016).

[12] N. J. D. Martinez, M. Gehl, C. T. Derose. Single photon detection in a waveguide-coupled Ge-on-Si lateral avalanche photodiode. Opt. Express, 25, 16130-16139(2017).

[13] M. Ware, K. Rajamani, M. Floyd. Architecting for power management: the IBM® POWER7™ approach. The Sixteenth International Symposium on High-Performance Computer Architecture (HPCA), 1-11(2010).

[14] B. Wang, Z. Huang, Y. Yuan. 64 Gb/s low-voltage waveguide SiGe avalanche photodiodes with distributed Bragg reflectors. Photon. Res., 8, 1118-1123(2020).

[15] Z. Huang, C. Li, D. Liang. 25 Gbps low-voltage waveguide Si-Ge avalanche photodiode. Optica, 3, 793-798(2016).

[16] X. Zeng, Z. Huang, B. Wang. Silicon-germanium avalanche photodiodes with direct control of electric field in charge multiplication region. Optica, 6, 772-777(2019).

[17] L. Virot, P. Crozat, J.-M. Fédéli. Germanium avalanche receiver for low power interconnects. Nat. Commun., 5, 4957(2014).

[18] H. T. Chen, J. Verbist, P. Verheyen. 25-Gb/s 1310-nm optical receiver based on a sub-5-V waveguide-coupled germanium avalanche photodiode. IEEE Photon. J., 7, 7902909(2015).

[19] X. Hu, H. Zhang, D. Wu. High-performance germanium avalanche photodetector for 100  Gbit/s photonics receivers. Opt. Lett., 46, 3837-3840(2021).

[20] A. Heintz, B. Ilahi, A. Pofelski. Defect free strain relaxation of microcrystals on mesoporous patterned silicon. Nat. Commun., 13, 6624(2022).

[21] Y. Cai, C. Xie. Lattice mismatch, mechanical properties and lattice-compensation effect in Si_1-xGe_x alloys by using first-principles calculations combined with virtual crystal approximation. Phys. Lett. A, 411, 127528(2021).

[22] D. R. Decker, C. N. Dunn. Determination of germanium ionization coefficients from small-signal IMPATT diode characteristics. IEEE Trans. Electron Devices, 17, 290-299(1970).

[23] C. Li. Nonlinear Optics(2016).

[24] D. Dai, M. J. W. Rodwell, J. E. Bowers. Derivation of the small signal response and equivalent circuit model for a separate absorption and multiplication layer avalanche photodetector. IEEE J. Sel. Top. Quantum Electron., 16, 1328-1336(2010).

[25] D. Dai, H.-W. Chen, J. E. Bowers. Resonant normal-incidence separate-absorption-charge-multiplication Ge/Si avalanche photodiodes. Opt. Express, 17, 16549-16557(2009).

[26] M. Grundmann. The Physics of Semiconductors(2016).

[27] B. Wang, Z. Huang, X. Zeng. A compact model for Si-Ge avalanche photodiodes over a wide range of multiplication gain. J. Lightwave Technol., 37, 3229-3235(2019).

[28] Y. Yuan, Z. Huang, X. Zeng. High responsivity Si-Ge waveguide avalanche photodiodes enhanced by loop reflector. IEEE J. Sel. Top. Quantum Electron., 28, C1-C8(2022).

[29] S. M. Sze. Physics of Semiconductor Devices(2006).

[30] C. L. Hsin, C. H. Chou. Buffer-free Ge/Si by rapid melting growth technique for separate absorption and multiplication avalanche photodetectors. IEEE Electron Device Lett., 40, 945-948(2019).

[31] S. A. Srinivasan, M. Berciano, P. D. Heyn. 27 GHz silicon-contacted waveguide-coupled Ge/Si avalanche photodiode. J. Lightwave Technol., 38, 3044-3050(2020).

[32] Y. Xiang, H. Cao, C. Liu. High-performance waveguide Ge/Si avalanche photodiode with a lateral separate-absorption-charge-multiplication structure. Opt. Express, 30, 11288-11297(2022).

[33] J. Michel, J. Liu, L. C. Kimerling. High-performance Ge-on-Si photodetectors. Nat. Photonics, 4, 527-534(2010).

[34] Y. Kang, H.-D. Liu, M. Morse. Monolithic germanium/silicon avalanche photodiodes with 340 GHz gain–bandwidth product. Nat. Photonics, 3, 59-63(2009).

[35] X.-L. Li, Z. Liu, L.-Z. Peng. High-performance germanium waveguide photodetectors on silicon. Chin. Phys. Lett., 37, 038503(2020).

[36] M. Oehme, J. Werner, E. Kasper. High bandwidth Ge p-i-n photodetector integrated on Si. Appl. Phys. Lett., 89, 1135(2006).

[37] Z. Liu, F. Yang, W. Wu. 48 GHz high-performance Ge-on-SOI photodetector with zero-bias 40 Gbps grown by selective epitaxial growth. J. Lightwave Technol., 35, 5306-5310(2017).