Photonics Research, Volume. 12, Issue 12, 2931(2024)
Low dark current and low voltage germanium avalanche photodetector for a silicon photonic link
Fig. 1. (a) Schematic diagram for cross section of the Ge APD. (b) Simulated results for electric field distribution in the cross section of the Ge APD when the bias voltage is
Fig. 3. (a) Plots for the photocurrent against the bias voltage in the cases of 1550 nm incident light with optical power varied from
Fig. 4. (a) Plots of the measured responsivity versus bias voltage under the input optical power varied from
Fig. 5. (a) Measured results for RF response of the Ge APD under the bias voltage varied from 0 V to
Fig. 6. (a) Equivalent circuit of the APD. Measured and simulated RF response of APD at a bias voltage of (b)
Fig. 7. Experimental setup for characterizing the present APD eye diagram test. The red lines represent the optical connections, and the blue lines represent the electric connections. MZM, Mach–Zehnder modulator; DC, direct current; AWG, arbitrary waveform generator; PC, polarization controller; OSC, oscilloscope.
Fig. 8. Electrical eye diagrams of 20 Gbps, 25 Gbps, and 32 Gbps NRZ signals with
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Xuetong Li, Huan Qu, Xiaobin Liu, Qijie Xie, Weipeng Wang, Yingzhi Li, Baisong Chen, Heming Hu, Jie Li, Zihao Zhi, Patrick Lo, Quanxin Na, Xueyan Li, Lei Wang, Xiaolong Hu, Junfeng Song, "Low dark current and low voltage germanium avalanche photodetector for a silicon photonic link," Photonics Res. 12, 2931 (2024)
Category: Silicon Photonics
Received: Jul. 2, 2024
Accepted: Oct. 4, 2024
Published Online: Nov. 29, 2024
The Author Email: Junfeng Song (songjf@jlu.edu.cn)
CSTR:32188.14.PRJ.534507