Journal of Infrared and Millimeter Waves, Volume. 43, Issue 3, 1(2024)

Metal microstrip line defect detection of chip based on THz-TDR technology

Zhen XU1,2, De-Gang XU1,2, Long-Hai LIU1,2, Ji-Ning LI1,2、*, Jia-Xin ZHANG3, Tan WANG3, Xiang REN3, Xiu-Ming QIAO3, and Chen JIANG3
Author Affiliations
  • 1School of Precision Instrμments and Opto-Electronics Engineering,Tianjin University,Tianjin 300072,China
  • 2Key Laboratory of Opto-Electronic Information Technology ( Ministry of Education),Tianjin University,Tianjin 300072,China
  • 3Aerospace Science & Industry Corp Defense Technology R&T Center,Beijing 100854,China
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    Figures & Tables(15)
    Experimental sample diagram:(a) Sample design drawings;(b) Physical drawings of samples;(c) Cross-sectional view of the sample
    Time domain reflectometer reflection signals under different faults
    Schematic diagram of time-domain reflection of terahertz pulses
    Open circuit measurement method diagram of time-domain reflectometer
    Reflection signal diagram of metal wire convex defect with different parameters:(a) The α is 75% of the convex defects of metal wires with different line wi dths;(b) Different proportional convex defects when the w is 15 μm
    Reflection signal diagram of metal wire concave defect with different parameters:(a) The α is 75% of metal wire concave defects with different line widths;(b) Different proportions of concave defects when the w is 25 μm
    Measurement contact mode of time domain reflectometer for bimetal wire
    Reflected signal diagrams of different defect types of metal wires with different line widths: (a) Different defect types when the w is 10 μm; (b) Different defect types when the w is 15 μm; (c) Different defect types when the w is 20 μm; (d) Different defect types when the w is 25 μm
    Reflected signal diagram with different defect ratios of the same line width:(a) 25% defect ratio; (b) 50% defect ratio; (c) 75% defect rate
    Electromagnetic field distribution in microstrips
    Simulation structure diagram of single metal wire defect
    TDR simulation signals of convex defects:(a) Different w with same α; (b)Different α with same w
    TDR simulation signals of concave defects:(a) Different w with same α; (b) Different α with same w
    • Table 1. Specific parameters of line width defects in simulated conductors

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      Table 1. Specific parameters of line width defects in simulated conductors

      α

      w/μm

      25%50%75%
      102.5 μm5 μm7.5 μm
      153.75 μm7.5 μm11.25 μm
      205 μm10 μm15 μm
      256.25 μm12.5 μm18.75 μm
    • Table 2. Chip defect localization detection results

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      Table 2. Chip defect localization detection results

      样品序号缺陷类型时间(ps)测试位置(μm)缺陷位置(μm)偏差(μm)测试时放大图缺陷类型时间(ps)测试位置(μm)缺陷位置(μm)偏差(μm)测试时放大图
      1凸起24.91 422.841 995572.16凹陷23.361 334.811 995660.19
      2凸起27.981 598.81 995396.2凹陷29.961 711.941 995283.06
      3凸起26.31 502.81 995492.2凹陷29.51 685.661 995309.34
      4凸起30.61 742.251 992.5250.25凹陷31.61 799.461 992.5193.04
      5凸起31.81 810.851 992.5181.65凹陷32.461 848.441 992.5144.06
      6凸起27.921 589.911 992.5402.59凹陷31.241 778.961 992.5213.54
      7凸起30.961 757.761 990232.24凹陷31.261 774.791 990215.21
      8凸起30.51 731.641 990258.36凹陷32.31 833.831 990156.17
      9凸起31.641 796.361 990193.64凹陷31.781 804.311990185.69
      10凸起32.341 831.941 987.5155.56凹陷30.961 753.771 987.5233.73
      11凸起31.261 770.771 987.5216.73凹陷32.261 827.421 987.5160.08
      12凸起30.741 741.311 987.5246.19凹陷29.741 684.671 987.5302.83
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    Zhen XU, De-Gang XU, Long-Hai LIU, Ji-Ning LI, Jia-Xin ZHANG, Tan WANG, Xiang REN, Xiu-Ming QIAO, Chen JIANG. Metal microstrip line defect detection of chip based on THz-TDR technology[J]. Journal of Infrared and Millimeter Waves, 2024, 43(3): 1

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    Paper Information

    Category: Research Articles

    Received: Sep. 7, 2023

    Accepted: --

    Published Online: Apr. 29, 2024

    The Author Email: Ji-Ning LI (jiningli@tju.edu.cn)

    DOI:10.11972/j.issn.1001-9014.2024.03.010

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