Fig. 1. (a) Device architecture of PDs. (b) Cross-sectional SEM image of each layer in the device with a structure of (a). (c), (d) Cross-sectional EDS mapping images of different elements for each layer of the device in (a). (e) Schematic processing scheme of the antisolvent-assisted perovskite deposition process; the dashed parts are the chemical structures of antisolvents used in this work (TAA, TL, CB, nBA, and IPA).

Fig. 2. (a) Photograph of TAA-PSK film on ITO glass before annealing. (b) FTIR spectra of TAA-PSK films with and without annealing. (c) Photographs of different antisolvents processed films after annealing.

Fig. 3. Energy band and charge transfer diagram of PDs.

Fig. 4. Optical properties of different antisolvent-processed films. (a) Absorption spectra. (b) XRD patterns. (c) Steady-state PL spectra; inset plots the corresponding emission peak position. (d) TRPL spectra; inset plots the values of τ1 and τ2.

Fig. 5. Morphologies of different antisolvents processed perovskite films. (a)–(e) Top-view SEM images; the scale bar is 1 μm. (f)–(j) AFM images; the scanned area is 5  μm×5  μm, and the scale bar is 1 μm. (k)–(o) Top-view SEM images; the scale bar is 5 μm.

Fig. 6. Grain-size distribution histograms of films based on (a) TAA-PSK, (b) TL-PSK, (c) CB-PSK, (d) nBA-PSK, and (e) IPA-PSK measured by SEM images with the scale bar of 1 μm.

Fig. 7. Electrical properties of PDs. (a) I-V characteristics of the PDs processed by different antisolvents in dark condition and the illumination of 532 nm laser with a power density of 6.37  mW/cm2. (b) I-V characteristics of the TAA-PD under the illumination of 532 nm laser with different power densities. (c) Dependences of photoresponsivity of the PDs processed by different antisolvents on the incident power density at 532 nm; VBias=−2  V. (d) Dependences of detectivity of the PDs processed by different antisolvents on the incident power density at 532 nm; VBias=−2  V. (e) Dependences of EQE of the PDs processed by different antisolvents on the incident power density at 532 nm; VBias=−2  V. (f) Dependences of photocurrent of the PDs processed by different antisolvents on the incident power density at 532 nm; VBias=0  V. The linear goodness values of the fitted curves are in brackets.

Fig. 8. Photoswitching properties of the PDs. (a) Photoswitching characteristics of the TAA-PD measured alternately in dark and under 532 nm laser illumination (1.27  mW/cm2, VBias=0  V). (b) The switching time of the TAA-PD during one ON/OFF illumination switching cycle. (c) Photocurrent stability measurement of TAA-PD for 1000 continuous switching cycles. Photoswitching characteristics of the TAA-PD under (d) 532 nm, (e) 405 nm, and (f) 808 nm laser illumination with different power densities. (g) Photoswitching characteristics of the PDs processed by different antisolvents measured alternately in dark and under 532 nm laser illumination (1.27  mW/cm2, VBias=0  V). (h) Photoswitching characteristics of the PDs processed by different antisolvents measured alternately in dark and under 405, 532, and 808 nm laser illumination (1.27  mW/cm2, VBias=0  V), respectively. (i) Photocurrent distribution of the PDs processed by different antisolvents measured alternately in dark and under 405, 532, and 808 nm laser illumination (1.27  mW/cm2, VBias=0  V), respectively. (j) Test schematic diagram of response time.

Fig. 9. Electrical and photoswitching properties of TL-PD. (a) I-V characteristics under the illumination of 532 nm laser with different power densities. (b) Photoswitching characteristics measured alternately in dark and under 532 nm laser illumination (1.27  mW/cm2, VBias=0  V). (c) Switching time of the TL-PD during one ON/OFF illumination switching cycle. Photoswitching characteristics under (d) 532 nm, (e) 405 nm, and (f) 808 nm laser illumination with different power densities.

Fig. 10. Electrical and photoswitching properties of CB-PD. (a) I-V characteristics under the illumination of 532 nm laser with different power densities. (b) Photoswitching characteristics measured alternately in dark and under 532 nm laser illumination (1.27  mW/cm2, VBias=0  V). (c) Switching time of the CB-PD during one ON/OFF illumination switching cycle. Photoswitching characteristics under (d) 532 nm, (e) 405 nm, and (f) 808 nm laser illumination with different power densities.

Fig. 11. Electrical and photoswitching properties of nBA-PD. (a) I-V characteristics under the illumination of 532 nm laser with different power densities. (b) Photoswitching characteristics measured alternately in dark and under 532 nm laser illumination (1.27  mW/cm2, VBias=0  V). (c) Switching time of the nBA-PD during one ON/OFF illumination switching cycle. Photoswitching characteristics under (d) 532 nm, (e) 405 nm, and (f) 808 nm laser illumination with different power densities.

Fig. 12. Electrical and photoswitching properties of IPA-PD. (a) I-V characteristics under the illumination of 532 nm laser with different power densities. (b) Photoswitching characteristics measured alternately in dark and under 532 nm laser illumination (1.27  mW/cm2, VBias=0  V). (c) Switching time of the IPA-PD during one ON/OFF illumination switching cycle. Photoswitching characteristics under (d) 532 nm, (e) 405 nm, and (f) 808 nm laser illumination with different power densities.