Efficient InGaN-based yellow-light-emitting diodes

Fengyi Jiang; Jianli Zhang; Longquan Xu; Jie Ding; Guangxu Wang; Xiaoming Wu; Xiaolan Wang; Chunlan Mo; Zhijue Quan; Xing Guo; Changda Zheng; Shuan Pan; Junlin Liu

doi:10.1364/PRJ.7.000144

Photonics Research, Volume. 7, Issue 2, 144(2019)

Efficient InGaN-based yellow-light-emitting diodes

Fengyi Jiang^1、*, Jianli Zhang^1,2, Longquan Xu^1,2, Jie Ding^1,2, Guangxu Wang^1,2, Xiaoming Wu^1,2, Xiaolan Wang^1,2, Chunlan Mo^1,2, Zhijue Quan^1,2, Xing Guo^1,2, Changda Zheng^1,2, Shuan Pan^1,2, and Junlin Liu^1,2,3

Author Affiliations

¹National Institute of LED on Silicon Substrate, Nanchang University, Nanchang 330096, China

²Nanchang Yellow Green Lighting Company Limited, Nanchang 330096, China

³e-mail: liujunlin@ncu.edu.cn

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CLP Journals

[1] Shengnan Zhang, Jianli Zhang, Jiangdong Gao, Xiaolan Wang, Changda Zheng, Meng Zhang, Xiaoming Wu, Longquan Xu, Jie Ding, Zhijue Quan, Fengyi Jiang, "Efficient emission of InGaN-based light-emitting diodes: toward orange and red," Photonics Res. 8, 1671 (2020)

[2] Xiaohang Li, Russell D. Dupuis, Tim Wernicke, "Semiconductor UV photonics: feature introduction," Photonics Res. 7, SUVP1 (2019)

[3] Yingjun Zhou, Xin Zhu, Fangchen Hu, Jianyang Shi, Fumin Wang, Peng Zou, Junlin Liu, Fengyi Jiang, Nan Chi, "Common-anode LED on a Si substrate for beyond 15 Gbit/s underwater visible light communication," Photonics Res. 7, 1019 (2019)

[4] Zhou Wang, Xinyi Shan, Xugao Cui, Pengfei Tian. Characteristics and techniques of GaN-based micro-LEDs for application in next-generation display[J]. Journal of Semiconductors, 2020, 41(4): 041606

[5] Fangchen Hu, Shouqing Chen, Guoqiang Li, Peng Zou, Junwen Zhang, Jian Hu, Jianli Zhang, Zhixue He, Shaohua Yu, Fengyi Jiang, Nan Chi, "Si-substrate LEDs with multiple superlattice interlayers for beyond 24 Gbps visible light communication," Photonics Res. 9, 1581 (2021)

[6] Quan-Jiang Lv, Yi-Hong Zhang, Chang-Da Zheng, Jiang-Dong Gao, Jian-Li Zhang, Jun-Lin Liu. Analysis of stress-induced inhomogeneous electroluminescence in GaN-based green LEDs grown on mesh-patterned Si (111) substrates with n-type AlGaN layer[J]. Chinese Physics B, 2020, 29(8):

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Fengyi Jiang, Jianli Zhang, Longquan Xu, Jie Ding, Guangxu Wang, Xiaoming Wu, Xiaolan Wang, Chunlan Mo, Zhijue Quan, Xing Guo, Changda Zheng, Shuan Pan, Junlin Liu, "Efficient InGaN-based yellow-light-emitting diodes," Photonics Res. 7, 144 (2019)

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Paper Information

Category: Optoelectronics

Received: Sep. 10, 2018

Accepted: Nov. 10, 2018

Published Online: May. 7, 2019

The Author Email: Fengyi Jiang (jiangfengyi@ncu.ed.cn)

DOI:10.1364/PRJ.7.000144

Topics

laser devices and laser physics

Lasers and Laser Optics

Laser physics

laser manufacturing

Instrumentation, Measurement and Metrology