Efficient InGaN-based yellow-light-emitting diodes

Fengyi Jiang; Jianli Zhang; Longquan Xu; Jie Ding; Guangxu Wang; Xiaoming Wu; Xiaolan Wang; Chunlan Mo; Zhijue Quan; Xing Guo; Changda Zheng; Shuan Pan; Junlin Liu

doi:10.1364/PRJ.7.000144

Photonics Research, Volume. 7, Issue 2, 144(2019)

Efficient InGaN-based yellow-light-emitting diodes

Fengyi Jiang^1、*, Jianli Zhang^1,2, Longquan Xu^1,2, Jie Ding^1,2, Guangxu Wang^1,2, Xiaoming Wu^1,2, Xiaolan Wang^1,2, Chunlan Mo^1,2, Zhijue Quan^1,2, Xing Guo^1,2, Changda Zheng^1,2, Shuan Pan^1,2, and Junlin Liu^1,2,3

Author Affiliations

¹National Institute of LED on Silicon Substrate, Nanchang University, Nanchang 330096, China

²Nanchang Yellow Green Lighting Company Limited, Nanchang 330096, China

³e-mail: liujunlin@ncu.edu.cn

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References(19)

[1] N. Holonyak, S. F. Bevacqua. Coherent (visible) light emission from Ga(As_1-xP_x) junctions. Appl. Phys. Lett., 1, 82-83(1962).

[2] Y. Narukawa, M. Ichikawa, D. Sanga, M. Sano, T. Mukai. White light emitting diodes with super-high luminous efficacy. J. Phys. D, 43, 354002(2010).

[3] M. R. Krames, H. M. Ochiai, G. E. Hofler, C. C. Carter. High-power truncated inverted pyramid (Al_xGa_1-x)_0.5In_0.5P/GaP light-emitting diodes exhibiting >50% external quantum efficiency. Appl. Phys. Lett., 75, 2365-2367(1999).

[4] B. Damilano, B. Gil. Yellow-red emission from (Ga,In)N heterostructures. J. Phys. D, 48, 403001(2015).

[5] W. O. Groves, A. H. Herzog, M. G. Craford. The effect of nitrogen doping on GaAs_1-xP_x electroluminescent diodes. Appl. Phys. Lett., 19, 184-186(1971).

[6] C. P. Kuo, R. M. Fletcher, T. D. Osentowski, M. C. Lardizabal, M. G. Craford, V. M. Robbins. High performance AlGaInP visible light-emitting diodes. Appl. Phys. Lett., 57, 2937-2939(1990).

[7] F. A. Kish, F. M. Steranka, D. C. DeFevere, D. A. Vanderwater, K. G. Park, C. P. Kuo, T. D. Osentowski, M. J. Peanasky, J. G. Yu, R. M. Fletcher, D. A. Steigerwald, M. G. Craford. Very high-efficiency semiconductor wafer-bonded transparent-substrate (Al_xGa_1-x)_0.5In_0.5P/GaP light-emitting diodes. Appl. Phys. Lett., 64, 2839-2841(1994).

[8] H. Satoa, R. B. Chung, H. Hirasawa, N. Fellows, H. Masui, F. Wu, M. Saito, K. Fujitob, J. S. Speck, S. P. DenBaars, S. Nakamura. Optical properties of yellow light-emitting diodes grown on semipolar (11-22) bulk GaN substrates. Appl. Phys. Lett., 92, 221110(2008).

[9] S. Saito, R. Hashimoto, J. Hwang, S. Nunoue. InGaN light-emitting diodes on c-face sapphire substrates in green gap spectral range. Appl. Phys. Express, 6, 111004(2013).

[10] J. Zhang, C. Xiong, J. Liu, Z. Quan, L. Wang, F. Jiang. High brightness InGaN-based yellow light-emitting diodes with strain modulation layers grown on Si substrate. Appl. Phys. A, 114, 1049-1053(2014).

[11] F. Jiang, Y. Pu. Double inlet showerhead for metal organic vapor deposition reactor. CN patent(2006).

[12] J. Liu, J. Zhang, Q. Mao, X. Wu, F. Jiang. Effects of AlN interlayer on growth of GaN-based LED on patterned silicon substrate. CrystEngComm, 15, 3372-3376(2013).

[13] A. Hangleiter, F. Hitzel, C. Netzel, D. Fuhrmann, U. Rossow, G. Ade, P. Hinze. Suppression of nonradiative recombination by V-shaped pits in GaInN/GaN quantum wells produces a large increase in the light emission efficiency. Phys. Rev. Lett., 95, 127402(2005).

[14] X. Wu, J. Liu, Z. Quan, C. Xiong, C. Zheng, J. Zhang, Q. Mao, F. Jiang. Electroluminescence from the sidewall quantum wells in the V-shaped pits of InGaN light emitting diodes. Appl. Phys. Lett., 104, 221101(2014).

[15] Z. Quan, L. Wang, C. Zheng, J. Liu, F. Jiang. Roles of V-shaped pits on the improvement of quantum efficiency in InGaN/GaN multiple quantum well light-emitting diodes. J. Appl. Phys., 116, 183107(2014).

[16] X. Wu, J. Liu, F. Jiang. Hole injection from the sidewall of V-shaped pits into c-plane multiple quantum wells in InGaN light emitting diodes. J. Appl. Phys., 118, 164504(2015).

[17] Z. Quan, J. Liu, F. Fang, G. Wang, F. Jiang. A new interpretation for performance improvement of high-efficiency vertical blue light-emitting diodes by InGaN/GaN superlattices. J. Appl. Phys., 118, 193102(2015).

[18] C. Li, C. Wu, C. Hsu, L. Lu, H. Li, T. Lu, Y. Wu. 3D numerical modeling of the carrier transport and radiative efficiency for InGaN/GaN light emitting diodes with V-shaped pits. AIP Adv., 6, 055208(2016).

[19] J. Liu, J. Zhang, G. Wang, C. Mo, L. Quan, J. Din, Z. Quan, X. Wang, S. Pan, C. Zheng, X. Wu, W. Fang, F. Jiang. Status of GaN-based green light-emitting diodes. Chin. Phys. B, 24, 067804(2015).

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[6] Quan-Jiang Lv, Yi-Hong Zhang, Chang-Da Zheng, Jiang-Dong Gao, Jian-Li Zhang, Jun-Lin Liu. Analysis of stress-induced inhomogeneous electroluminescence in GaN-based green LEDs grown on mesh-patterned Si (111) substrates with n-type AlGaN layer[J]. Chinese Physics B, 2020, 29(8):

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Fengyi Jiang, Jianli Zhang, Longquan Xu, Jie Ding, Guangxu Wang, Xiaoming Wu, Xiaolan Wang, Chunlan Mo, Zhijue Quan, Xing Guo, Changda Zheng, Shuan Pan, Junlin Liu. Efficient InGaN-based yellow-light-emitting diodes[J]. Photonics Research, 2019, 7(2): 144

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Paper Information

Category: Optoelectronics

Received: Sep. 10, 2018

Accepted: Nov. 10, 2018

Published Online: May. 7, 2019

The Author Email: Fengyi Jiang (jiangfengyi@ncu.ed.cn)

DOI:10.1364/PRJ.7.000144

Topics

laser devices and laser physics

Lasers and Laser Optics

Laser physics

laser manufacturing

Instrumentation, Measurement and Metrology