Fig. 1. Schematic epitaxial structure of an InGaN yellow LED grown on Si substrate.

Fig. 2. (a) TEM image of a V-pit and (b) schematic 3D pn junction with V-pit structure.

Fig. 3. FL morphology of InGaN QWs of a yellow LED on Si substrate.

Fig. 4. Omega-2theta scan curve of the yellow InGaN LED structure grown on Si substrate.

Fig. 5. SIMS depth profile of Mg-In-Al-Si in the yellow LED structure on Si substrate.

Fig. 6. Plot of WPE and light output power as functions of current density for a yellow LED on Si substrate.

Fig. 7. Dependence of (a) WPE, (b) efficacy, (c) voltage, and (d) FWHM on wavelength for InGaN-based LEDs on Si substrate from the green to orange emission range.

Fig. 8. Spectrum of a CM white LED without phosphor made up by InGaN blue, cyan, green, and yellow LEDs and AlGaInP red LEDs.