Efficient InGaN-based yellow-light-emitting diodes

Fengyi Jiang; Jianli Zhang; Longquan Xu; Jie Ding; Guangxu Wang; Xiaoming Wu; Xiaolan Wang; Chunlan Mo; Zhijue Quan; Xing Guo; Changda Zheng; Shuan Pan; Junlin Liu

doi:10.1364/PRJ.7.000144

Photonics Research, Volume. 7, Issue 2, 144(2019)

Efficient InGaN-based yellow-light-emitting diodes

Fengyi Jiang^1、*, Jianli Zhang^1,2, Longquan Xu^1,2, Jie Ding^1,2, Guangxu Wang^1,2, Xiaoming Wu^1,2, Xiaolan Wang^1,2, Chunlan Mo^1,2, Zhijue Quan^1,2, Xing Guo^1,2, Changda Zheng^1,2, Shuan Pan^1,2, and Junlin Liu^1,2,3

Author Affiliations

¹National Institute of LED on Silicon Substrate, Nanchang University, Nanchang 330096, China

²Nanchang Yellow Green Lighting Company Limited, Nanchang 330096, China

³e-mail: liujunlin@ncu.edu.cn

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Fengyi Jiang, Jianli Zhang, Longquan Xu, Jie Ding, Guangxu Wang, Xiaoming Wu, Xiaolan Wang, Chunlan Mo, Zhijue Quan, Xing Guo, Changda Zheng, Shuan Pan, Junlin Liu. Efficient InGaN-based yellow-light-emitting diodes[J]. Photonics Research, 2019, 7(2): 144

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Paper Information

Category: Optoelectronics

Received: Sep. 10, 2018

Accepted: Nov. 10, 2018

Published Online: May. 7, 2019

The Author Email: Fengyi Jiang (jiangfengyi@ncu.ed.cn)

DOI:10.1364/PRJ.7.000144

Topics

laser devices and laser physics

Lasers and Laser Optics

Laser physics

laser manufacturing

Instrumentation, Measurement and Metrology