Hole Injection Efficiency Improvement for AlGaN-Based Deep Ultraviolet Light-Emitting Diodes

Kangkai Tian; Chunshuang Chu; Wengang Bi; Yonghui Zhang; Zihui Zhang

doi:10.3788/LOP56.060001

Laser & Optoelectronics Progress, Volume. 56, Issue 6, 060001(2019)

Hole Injection Efficiency Improvement for AlGaN-Based Deep Ultraviolet Light-Emitting Diodes

Kangkai Tian^1,2, Chunshuang Chu^1,2, Wengang Bi^1,2, Yonghui Zhang^1,2、**, and Zihui Zhang^1,2、*

¹ Institute of Micro-Nano Photoelectron and Electromagnetic Technology Innovation, School of Electronics and Information Engineering, Hebei University of Technology, Tianjin 300401, China

² Key Laboratory of Electronic Materials and Devices of Tianjin, Tianjin 300401, China

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Kangkai Tian, Chunshuang Chu, Wengang Bi, Yonghui Zhang, Zihui Zhang. Hole Injection Efficiency Improvement for AlGaN-Based Deep Ultraviolet Light-Emitting Diodes[J]. Laser & Optoelectronics Progress, 2019, 56(6): 060001

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Paper Information

Category: Reviews

Received: Sep. 11, 2018

Accepted: Nov. 13, 2018

Published Online: Jul. 30, 2019

The Author Email: Zhang Yonghui (zhangyh@hebut.edu.cn), Zhang Zihui (zh.zhang@hebut.edu.cn)

DOI:10.3788/LOP56.060001

Topics

laser devices and laser physics

Lasers and Laser Optics

Laser physics

laser manufacturing

Instrumentation, Measurement and Metrology