Chinese Optics Letters, Volume. 15, Issue 8, 082301(2017)

4×25GHz uni-traveling carrier photodiode arrays monolithic with InP-based AWG demultiplexers using the selective area growth technique

Han Ye1, Qin Han1,2、*, Qianqian Lv1, Pan Pan1, Junming An1,3, Xiaohong Yang1,3, Yubing Wang1, and Rongrui Liu1
Author Affiliations
  • 1State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
  • 2School of Electronic, Electrical and Communication Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
  • 3College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing 100049, China
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    References(15)

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    [15] S. Adachi. Physical Properties of III-V Semiconductor Compounds: InP, InAs, GaAs, GaP, InGaAs, and InGaAsP(1992).

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    Han Ye, Qin Han, Qianqian Lv, Pan Pan, Junming An, Xiaohong Yang, Yubing Wang, Rongrui Liu. 4×25GHz uni-traveling carrier photodiode arrays monolithic with InP-based AWG demultiplexers using the selective area growth technique[J]. Chinese Optics Letters, 2017, 15(8): 082301

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    Paper Information

    Category: Optical devices

    Received: Mar. 12, 2017

    Accepted: May. 18, 2017

    Published Online: Jul. 20, 2018

    The Author Email: Qin Han (hanqin@semi.ac.cn)

    DOI:10.3788/COL201715.082301

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