Chinese Optics Letters, Volume. 15, Issue 8, 082301(2017)
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Fig. 2. Butt-joint (a) with and (b) without the extended matching layer.
Fig. 3. (Color online) Simulated quantum efficiency of the PD with increasing distance between the butt-joint interface and the PD mesa.
Fig. 4. SEMs in device fabrication with (a): the butt-joint interface after SAG; (b): the overgrown ridge at the interface; (c): deep-ridge etched arrayed waveguides; (d): the PD after the AWG is cleaved off.
Fig. 5. Top views of the (a) 20 nm and (b) 800 GHz channel spacing AWG-UTC chips.
Fig. 6. (Color online) Spectral photoresponse of the 20 nm channel spacing AWG-UTC chip.
Fig. 7. (Color online) Spectral photo-response of the 800 GHz channel spacing AWG-UTC chip.
Table 1. Epitaxial Structure Before Regrowth.
View tableView in ArticleTable 1. Epitaxial Structure Before Regrowth.
Composition Thickness (nm) Doping n @1310 nmFunction 30 3.65-i0.148 p-contact InP 300 3.21 Electron blocker 590 P, graded 3.65-i0.148 Absorber InGaAsP (Q1.24) 40 3.42 Cliff layer InGaAsP (Q1.24) 430 U.I.D 3.42 Collector InP 100 N 3.21 Dopant blocker InGaAsP (Q1.24) 500 3.42 Matching layer InP 150 U.I.D 3.21 Etch stop InGaAsP (Q1.05) 500 U.I.D 3.298 AWG core InP 1000 U.I.D 3.21 Bottom cladding
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Han Ye, Qin Han, Qianqian Lv, Pan Pan, Junming An, Xiaohong Yang, Yubing Wang, Rongrui Liu.
Paper Information
Category: Optical devices
Received: Mar. 12, 2017
Accepted: May. 18, 2017
Published Online: Jul. 20, 2018
The Author Email: Qin Han (hanqin@semi.ac.cn)
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