<inline-formula><mml:math display="inline" id="m1" xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:mrow><mml:mn>4</mml:mn><mml:mo>×</mml:mo><mml:mn>25</mml:mn><mml:mtext> </mml:mtext><mml:mtext> </mml:mtext><mml:mi>GHz</mml:mi></mml:mrow></mml:math></inline-formula> uni-traveling carrier photodiode arrays monolithic with InP-based AWG demultiplexers using the selective area growth technique

Han Ye; Qin Han; Qianqian Lv; Pan Pan; Junming An; Xiaohong Yang; Yubing Wang; Rongrui Liu

doi:10.3788/COL201715.082301

Chinese Optics Letters, Volume. 15, Issue 8, 082301(2017)

$4 \times 25 GHz$ uni-traveling carrier photodiode arrays monolithic with InP-based AWG demultiplexers using the selective area growth technique

Han Ye¹, Qin Han^1,2、*, Qianqian Lv¹, Pan Pan¹, Junming An^1,3, Xiaohong Yang^1,3, Yubing Wang¹, and Rongrui Liu¹

Author Affiliations

¹State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China

²School of Electronic, Electrical and Communication Engineering, University of Chinese Academy of Sciences, Beijing 100049, China

³College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing 100049, China

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Han Ye, Qin Han, Qianqian Lv, Pan Pan, Junming An, Xiaohong Yang, Yubing Wang, Rongrui Liu, " $4 \times 25 GHz$ uni-traveling carrier photodiode arrays monolithic with InP-based AWG demultiplexers using the selective area growth technique," Chin.Opt.Lett. 15, 082301 (2017)

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Paper Information

Category: Optical devices

Received: Mar. 12, 2017

Accepted: May. 18, 2017

Published Online: Jul. 20, 2018

The Author Email: Qin Han (hanqin@semi.ac.cn)

DOI:10.3788/COL201715.082301

Topics

laser devices and laser physics

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