Journal of Semiconductors, Volume. 45, Issue 5, 052502(2024)

Dual-Schottky-junctions coupling device based on ultra-long β-Ga2O3 single-crystal nanobelt and its photoelectric properties

Haifeng Chen*, Xiaocong Han, Chenlu Wu, Zhanhang Liu, Shaoqing Wang, Xiangtai Liu, Qin Lu, Yifan Jia, Zhan Wang, Yunhe Guan, Lijun Li, and Yue Hao
Author Affiliations
  • Key Laboratory of Advanced Semiconductor Devices and Materials, School of Electronic Engineering, Xi’an University of Posts and Telecommunications, Xi’an 710121, China
  • show less
    Figures & Tables(6)
    (Color online) (a) SEM diagram of synthesized ultra-large nanobelts which are about 2−3 mm in length. (b) The enlargement of the yellow dotted box of (a). Maximum width of these nanobelts is up to 132 μm. (c) XRD pattern of nanobelt. (d) Electron diffraction patterns of selected regions. (e) Low-resolution TEM image of nanobelt. (f) High resolution TEM image of nanobelt.
    (Color online) (a) Schematic diagram of device structure. (b) Image of the actual fabricated device. (c) Energy band of Schottky-junction under positive bias. W is the width of depletion layer. (d) I−V curves of Schottky-junctions of S1−O1 and S2−O2, respectively.
    (Color online) (a) Experimental IS2−VS2 curve of DSCD in the case of VS > 0 V. (b) Schematic diagram of energy band of device with grounded S1. The upper part is the case of VS = 0 V. The bottom part is the case of VS > 0 V. (c) Experimental IS1−VS1 curve when S2 is grounded. (d) Band diagram when VS2 is negative. (e) Experimental IS2−VS2 curve in the case of VS2 < 0 V.
    (Color online) (a) Schematic diagram of energy bands and current generated by photogenerated electrons at VS2 = 0 V. (b) Experimental I−T curve under UV switching conditions at VS2 = 0 V, (c) I−V curves of different power densities of 254 nm solar-blind UV light irradiation. (d) Energy band diagram of the device under UV light at VS > 0 V. (e) Comparison of IS2O2, IS1O1 and IS2 under UV illumination. (f) The relationship of P and IS2 under different VS2.
    (Color online) Photoelectric parametes at VS2 = 10 V under different P. (a) PDCR and R. (b) EQE and D*.
    (Color online) (a) Experimental I−T curves with different VS2 under 709 μW/cm2 UV irradiation. (b) and (c) Rise and decay time curves under conditons of VS2 > 0 V and VS2 < 0 V, respectively. (d) Schematic diagram of current of UV light turn-on and turn-off cases. (e) Schematic diagram of recombination process of generated-electrons during turn-off time. (f) Relationships between IS2 and VS2 during UV light turn-on and turn-off conditions.
    Tools

    Get Citation

    Copy Citation Text

    Haifeng Chen, Xiaocong Han, Chenlu Wu, Zhanhang Liu, Shaoqing Wang, Xiangtai Liu, Qin Lu, Yifan Jia, Zhan Wang, Yunhe Guan, Lijun Li, Yue Hao. Dual-Schottky-junctions coupling device based on ultra-long β-Ga2O3 single-crystal nanobelt and its photoelectric properties[J]. Journal of Semiconductors, 2024, 45(5): 052502

    Download Citation

    EndNote(RIS)BibTexPlain Text
    Save article for my favorites
    Paper Information

    Category: Articles

    Received: Dec. 6, 2023

    Accepted: --

    Published Online: Jul. 8, 2024

    The Author Email: Chen Haifeng (HFChen)

    DOI:10.1088/1674-4926/45/5/052502

    Topics